Capacitance-Voltage Characterization of LPCVD-Silicon Oxynitride Films

Abstract

LPCVD-silicon oxynitride films with different compositions were deposited on n-Si(111) substrates by reacting dichlorosilane (SiH 2 Cl 2 ) with nitrous oxide (N 2 O) and ammonia (NH 3 ) at a temperature of 860 o C varying the gas flow rate ratio of N 2 O and NH 3 . The electrical properties of the SiO x N y films were studied by analysis of the 1 MHz capacitance-voltage characteristics of the metal-SiO x N y -silicon capacitors. It has been found that with increasing amount of N 2 O in the deposition ambient the concentration of the dielectric charges in the SiO x N y /Si structures goes through a minimum, while the interface trap density gradually decreases. The nature of the defects is discussed.

SILICON QUANTUM DOTS GROWTH IN SiNx DIELECTRIC: A REVIEW

“…(Typical defects density for Si/SiO 2 interface is > 10 12 eV −1 cm −2 ). 12 A thick Si-rich SiN x (SRN) layer, a single amorphous silicon (a-Si) sandwiched layer between two thick SiN x layers, and alternate a-Si/SiN x ML are shown in Figs. 2(b)-2(d), respectively.…”