Capacitances in silicon microstrip detectors

Barberis, E.; Cartiglia, N.; LeVier, C.; Rahn, J.; Rinaldi, Paolo; Sadrozinski, H. F-W.; Wichmann, Romy; Ohsugi, T.; Unno, Y.; Matsubara, Hiroaki; Tamura, Naoyuki; Yamamoto, K.

doi:10.1016/0168-9002(94)91414-1

Cited by 73 publications

(12 citation statements)

References 6 publications

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“…Among other VII. ULTIMATE FLUENCE FOR THE ATLAS threshold voltage curves [14], and agrees with the noise SILICON TRACKER effects, the measured noise depends on the interstrip capacitance and we have observed that the interstrip capacitance changes dramatically due to inversion [15]. The n-side interstrip capacitance, which is strongly bias dependent before inversion, becomes bias independent after inversion and shows a strong decrease.…”

Section: Efficiency Along the Detector Stripssupporting

confidence: 80%

Efficiency of non-uniformly irradiated double-sided silicon strip detectors

Dubbs

Kashigin

Kratzer

et al. 1996

IEEE Trans. Nucl. Sci.

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We have investigated the efficiency and the noise occupancy of a double-sided silicon strip detector, which was subjected to non-uniform proton irradiations up to a maximum equivalent fluence of 5 . 1013p . ~m -~. The depletion voltage, varying over time due to controlled annealing, was close to zero on one end of the 6cm strips and 19OV at the high radiation end. We have determined the efficiency and noise occupancy on both n-side and p-side in a lo6Ru telescope, using a binary read-out system with 22ns shaping time.The n-side exhibits superior performance after type inversion.

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Section: Efficiency Along the Detector Stripssupporting

confidence: 80%

Efficiency of non-uniformly irradiated double-sided silicon strip detectors

Dubbs

Kashigin

Kratzer

et al. 1996

IEEE Trans. Nucl. Sci.

Self Cite

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“…Since the adjacent strips confine the fringing field lines to the interstrip boundaries, the strip appears as an electrode with a width equal to the strip pitch. Corrections apply at large strip widths (Barberis et al 1994). Ideally, reverse bias removes all mobile carriers from the junction volume, so no current can flow.…”

Section: Sensor Volumementioning

confidence: 99%

Detector Systems Overview

Spieler¹

2005

Semiconductor Detector Systems

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“…The 19 cm long strips foreseen for the outer region of the Tracker (to be compared with the 12 cm length of the inner region) imply a higher total capacitance. To avoid any deterioration of the signal-to-noise ratio, the ½µ The backplane capacitance per unit length calculated with a semi-analytical solution of the Poisson equation [16] is given by…”

Section: "Thick" Detectorsmentioning

confidence: 99%

Recent results for the CMS tracker silicon detectors

Dell’Orso

2001

IEEE Trans. Nucl. Sci.

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The paper reports on a detailed study of the radiation resistance of Ô · on Ò silicon microstrip detectors for the CMS tracking system.From this study it is seen that the use of low resistivity substrates with 100 crystal lattice orientation promises excellent performance of the Inner Tracker after heavy irradiation in the LHC environment. Furthermore, the advantage of using detectors thicker than 300 m in the Outer Tracker is discussed together with experimental measurements on prototypes.

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Capacitances in silicon microstrip detectors

Cited by 73 publications

References 6 publications

Efficiency of non-uniformly irradiated double-sided silicon strip detectors

Efficiency of non-uniformly irradiated double-sided silicon strip detectors

Detector Systems Overview

Recent results for the CMS tracker silicon detectors

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