Capacitive Deep Trench Isolation-Based CCD-on-CMOS Image Sensor Sensitivity to Total Ionizing Dose

Alj, A.; Touron, Pierre; Roy, F.; Demiguel, S.; Michelot, Julien; Virmontois, Cédric; Magnan, Pierre; Goiffon, Vincent

doi:10.1109/tns.2023.3283264

Cited by 3 publications

(1 citation statement)

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“…In this particular concept, CDTIs shape the electrostatic potential, leading to carrier displacement in a buried channel mode. This device presents attractive characteristics such as a Charge Transfer Inefficiency (CTI) lower than 10 −4 [15], a FWC of 57.6 ke − , a dynamic range of 78 dB [16], and a dark current of 0.11 nA/cm 2 at room temperature for a pixel size of 3 × 12 µm 2 . Therefore, this register combines a low CTI, a high FWC, and a low dark level.…”

Section: Introductionmentioning

confidence: 99%

Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

Marcelot,

Morvan,

Salih Alj

et al. 2023

Sensors

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This paper presents an electron multiplication charge coupled device (EMCCD) based on capacitive deep trench isolation (CDTI) and developed using complementary metal oxide semiconductor (CMOS) technology. The CDTI transfer register offers a charge transfer inefficiency lower than 10−4 and a low dark current o 0.11nA/cm2 at room temperature. In this work, the timing diagram is adapted to use this CDTI transfer register in an electron multiplication mode. The results highlight some limitations of this device in such an EM configuration: for instance, an unexpected increase in the dark current is observed. A design modification is then proposed to overcome these limitations and rely on the addition of an electrode on the top of the register. Thus, this new device preserves the good transfer performance of the register while adding an electron multiplication function. Technology computer-aided design (TCAD) simulations in 2D and 3D are performed with this new design and reveal a very promising structure.

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Section: Introductionmentioning

confidence: 99%