Capacitive RF MEMS Switches Fabricated in Standard 0.35-$\mu{\hbox{m}}$ CMOS Technology

Fouladi, Siamak; Mansour, Raafat R.

doi:10.1109/tmtt.2009.2038446

Cited by 74 publications

(29 citation statements)

References 23 publications

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“…When a switch is presented in [5], the return loss of -3.1dB and an isolation of -15dB are obtained from an output voltage of 7V and at a frequency of 40GHz. When a switch is presented in [6], the return loss of -0.98 dB and an isolation of -17.9dB are obtained from an output voltage of 82V and at a frequency of 20 GHz. Besides, when a switch is presented in [7], the return loss of -0.68 dB and an isolation of -35.78dB are obtained from an output voltage of 23.6V and at a frequency of 40 GHz.…”

Section: Introductionmentioning

confidence: 99%

Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

2019

Informacije MIDEM

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The present paper aimed at designing, optimizing, and simulating the RF MEMS Switch which is stimulated electrostatically. The design of the switch is located on the CoplanarWaveguide (CPW) transmission line. The pull-in voltage of the switch was 2V and the axial residual stress of the proposed design was obtained at 23MPa. In order to design and optimize the geometric structure of the switch, the desired model was extracted based on the objective functions of the actuation voltage and the return loss up-state and also the isolation down-state using the mathematical programming. Moreover, the model was solved by the NSGA-II meta-heuristic algorithm in MATLAB software. In addition, the design requirements and the appropriate levels for designing the switch were obtained by presenting the Pareto front from the beam actuation voltage and also the return loss up-state and isolation down-state. Finally, the RF parameters of the switch were calculated as S11=-2.54dB and S21=-33.18dB at the working frequency of 40GHz by extracting the appropriate parameters of the switch design through simulating a switch designed by the COMSOL Multiphysics software 4.4a and the advanced design system (ADS).

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Section: Introductionmentioning

confidence: 99%

Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

2019

Informacije MIDEM

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“…A number of structures have been reported in the literature for the capacitive switches having good RF performance in a single band, moderate pull-in voltage, but lags in multiband functionality (Rangra et al 2005;Fouladi and Mansour 2010;Bansal et al 2013;. The other approach is to combine series and shunt switches to realize multi-band devices.…”

Section: Introductionmentioning

confidence: 99%

A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch

Angira

Rangra

2014

Microsyst Technol

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“…This will consume a lot of chip area and can be minimized by multi-band tunable switches. A number of structures have been reported in the literature for the switches which have high isolation but can't be tuned for different bands [5]- [8]. In another approach combination of switches like series and shunt are used but requires large area and thus not suitable for future compact systems.…”

Section: Introductionmentioning

confidence: 99%

A novel interdigitated, inductively tuned, capacitive shunt RF — MEMS switch for X and K bands applications

Angira

Sundaram

Rangra

2014

The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

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This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, interdigitation of signal lines with actuation electrodes is used to make a compact device. A bridge structure anchored in between ground planes and attached to two cantilevers on either side has been used to implement the switch structure. This novel structure is used to inductively tune the isolation peaks in X and K bands which is not possible with conventional approach. The designed switch shows an insertion loss of 0.01 dB to 0.11 dB over the frequency range from 1 to 25 GHz. Isolation of 34.71, 34.33, and 40.7 dB has been observed at 10.4 GHz, 11 GHz and 21.4 GHz when bridge is electro-statically actuated with either left, right or both cantilevers in the down state respectively. The bridge structure shows a pull-in voltage of 12.25 V and switching time of 34.40 μs whereas left and right cantilevers have 7.5 V and 57 μs. The designed device can be useful for the future multiband communication applications.

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Capacitive RF MEMS Switches Fabricated in Standard 0.35-$\mu{\hbox{m}}$ CMOS Technology

Cited by 74 publications

References 23 publications

Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch

A novel interdigitated, inductively tuned, capacitive shunt RF — MEMS switch for X and K bands applications

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Capacitive RF MEMS Switches Fabricated in Standard 0.35-$\mu{\hbox{m}}$ CMOS Technology

Cited by 74 publications

References 23 publications

Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

A low insertion loss, multi-band, fixed central capacitor based RF-MEMS switch

A novel interdigitated, inductively tuned, capacitive shunt RF &#x2014; MEMS switch for X and K bands applications

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A novel interdigitated, inductively tuned, capacitive shunt RF — MEMS switch for X and K bands applications