Capacitive Trench-Based Charge Transfer Device

Touron, Pierre; Roy, F.; Magnan, Pierre; Marcelot, Olivier; Demiguel, S.; Virmontois, Cédric

doi:10.1109/led.2020.3014431

Cited by 10 publications

(8 citation statements)

References 8 publications

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“…The n-well doping profile has a maximum doping concentration at about 1 µm depth, which makes the charge storage possibly deep in the volume of the silicon, far from the surface. The n-well doping concentration has been adjusted in a way to allow for a full depletion of the buried layer, as described in the reference [15]. The n-well storage and transfer volume are delimited by a p+ pinning implantation on the top, as well as by the p-epitaxial layer at the bottom and laterally by the CDTI gates.…”

Section: Methodsmentioning

confidence: 99%

“…A trench CCD has been proposed in 1989 [14] where electrons are carried between two trenches, but the development seems to be canceled. Then, a CCD-on-CMOS trench structure based on CDTI has been developed in 2020 [15], and this device is used for this study. In this particular concept, CDTIs shape the electrostatic potential, leading to carrier displacement in a buried channel mode.…”

Section: Introductionmentioning

confidence: 99%

“…In this particular concept, CDTIs shape the electrostatic potential, leading to carrier displacement in a buried channel mode. This device presents attractive characteristics such as a Charge Transfer Inefficiency (CTI) lower than 10 −4 [15], a FWC of 57.6 ke − , a dynamic range of 78 dB [16], and a dark current of 0.11 nA/cm 2 at room temperature for a pixel size of 3 × 12 µm 2 . Therefore, this register combines a low CTI, a high FWC, and a low dark level.…”

Section: Introductionmentioning

confidence: 99%

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Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

Marcelot,

Morvan,

Salih Alj

et al. 2023

Sensors

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This paper presents an electron multiplication charge coupled device (EMCCD) based on capacitive deep trench isolation (CDTI) and developed using complementary metal oxide semiconductor (CMOS) technology. The CDTI transfer register offers a charge transfer inefficiency lower than 10−4 and a low dark current o 0.11nA/cm2 at room temperature. In this work, the timing diagram is adapted to use this CDTI transfer register in an electron multiplication mode. The results highlight some limitations of this device in such an EM configuration: for instance, an unexpected increase in the dark current is observed. A design modification is then proposed to overcome these limitations and rely on the addition of an electrode on the top of the register. Thus, this new device preserves the good transfer performance of the register while adding an electron multiplication function. Technology computer-aided design (TCAD) simulations in 2D and 3D are performed with this new design and reveal a very promising structure.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

Marcelot,

Morvan,

Salih Alj

et al. 2023

Sensors

Self Cite

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“…In response to the above application requirements, many scholars have carried out research on high-performance photodetectors. Using single-photon detection technology can greatly improve the detection efficiency of optoelectronic devices, such as photomultiplier tubes (PMTs) [ 26 , 27 ], charge-coupled devices (CCDs) [ 28 ], and avalanche photodiodes (APDs) [ 29 , 30 ]. However, PMT and CCD are not compatible with the standard integrated circuit design process, which limits the application of these devices.…”

Section: Introductionmentioning

confidence: 99%

A High-Detection-Efficiency Optoelectronic Device for Trace Cadmium Detection

Wang

2022

Sensors

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Cadmium (Cd) pollution in soil is a serious threat to food security and human health, while, currently, the most widely used detection methods cannot accurately reflect the content of heavy metals in soil. Soil heavy metal detection combined with microelectronic sensors has become an important means of environmental heavy metal pollution prevention and control. X-ray Fluorescence spectrometry (XRF) can capture the excitation spectrum of metal elements, which is often used to detect Cd (II). However, due to the lack of high-performance optoelectronic devices, the analysis accuracy of the system cannot meet the requirements. Therefore, this study proposes a high-detection-efficiency photodiode (HDEPD) which can effectively improve the detection accuracy of the analyzer. The HDEPD is manufactured based on a 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. The volt-ampere curve, spectral response and noise characteristics of the device are obtained by constructing a test circuit combined with a spectral detection system. The test results show that the threshold voltage of HDEPD is 12.15 V. When the excess bias voltage increases from 1 V to 3 V, the spectral response peak of the device appears at 500 nm, and the photon detection probability (PDP) increases from 41.7% to 52.8%. The dark count rate (DCR) is 31.9 Hz/μm2 at a 3 V excess bias voltage. Since the excitation spectrum peak of Cd (II) is between 500 nm and 600 nm, the wavelength response range of HDEPD fully meets the detection requirements of Cd (II).

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“…However, there are some restrictions on using the existing solution in advanced lithography systems. To achieve high charge transfer efficiency, CCDs require specialized fabrication processes [12]- [14]. For APS arrays can be made with processes which is compatible to CMOS process, the photodiodes are not optimized for electron beam collection [15], [16].…”

Section: Introductionmentioning

confidence: 99%

On-Wafer Electron Beam Detectors by Floating-Gate FinFET Technologies

Wang

Yang

Lin

et al. 2021

IEEE Trans. Electron Devices

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A novel electron beam detector made on Si wafers by the advanced CMOS FinFET processes has been proposed in this study. Through electron beam (e-Beam) charging of on-wafer sensing pads, electron dosage can be registered on the detector for follow-up read-out. Without external power or battery connections, this detector has successfully delivered on-chip dosage, intensity, and energy after e-Beam exposure.

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Capacitive Trench-Based Charge Transfer Device

Cited by 10 publications

References 8 publications

Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

A High-Detection-Efficiency Optoelectronic Device for Trace Cadmium Detection

On-Wafer Electron Beam Detectors by Floating-Gate FinFET Technologies

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