CAPELLA: a kHz and low-debris capillary discharge EUV source

Robert, Éric; Gonthiez, T.; Sarroukh, O.; Thomann, Anne-Lise; Viladrosa, Raymond; Fleurier, C.; Pouvesle, Jean-Michel; Cachoncinlle, Christophe

doi:10.1117/12.472276

Cited by 7 publications

(6 citation statements)

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“…The DPP EUV source has been extensively studied [22,[31][32][33][34][35][36][37]. The primary advantages of the DPP source are its high conversion efficiency and high EUV power.…”

Section: Euv Sourcementioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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“…The DPP EUV source has been extensively studied [22,[31][32][33][34][35][36][37]. The primary advantages of the DPP source are its high conversion efficiency and high EUV power.…”

Section: Euv Sourcementioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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“…The dynamics of the plasma column inside the FCD plasma system was investigated by capturing a sequence of end-on pinhole images with the help of a EUV pinhole camera. Measurements have been reported in [4].…”

Section: Experimental Set-upmentioning

confidence: 99%

Discharge-based sources of XUV-X radiations: development and applications

Pouvesle

Robert

Gonthiez

et al. 2003

Plasma Sources Sci. Technol.

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There is an increasing use of high energy photons in many fields of research and in industry. Where large installations such as synchrotrons or dedicated laser based source facilities can provide solutions for specific needs, they are presently unable to bring convenient solutions for on-site experiments or industrial processes. Compact discharge based devices appear to be a very interesting response to the demand in many cases. They can provide high photon fluxes in a wide spectral range, from VUV to hard x-rays, covering most of the actual needs. Certainly, they still need a lot of improvement and optimization to meet the most stringent requirements. In this paper, we will present some of the recent results we obtained in that field along with new applications. Among them, we will present our report on the performance of a novel and truly compact xenon-filled fast capillary discharge system which generates radiation mostly in the EUV region (10-16 nm) developed in the framework of an EUV lithography program. We will also present results obtained in the field of hard x-ray generation with a new source capable of producing high dose pulses in quasi-continuous or burst mode at a very high frequency developed for high speed cineradiography.

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“…Ever since Klosner and Silfvast's pioneering experimental evidence on the 13.5 nm EUV source based on xenon-filled capillary discharge plasma, 5) much progress has been seen in DPP studies. [6][7][8][9] Most of these studies are mainly focused on how to increase the EUV power and the source efficiency experimentally as well as theoretically. It is now well documented that a very narrow high-temperature highdensity xenon plasma column inside a capillary acts as an active medium for the emission of a copious amount of EUV radiation at around 13.5 nm, and this active medium can be realized by generating high-current discharge across the capillary.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Xenon Capillary Z-Pinch Extreme Ultraviolet Lithography Source Driven by Different dI/dt Discharge Current Pulses

Song¹,

Iwata²,

Homma³

et al. 2005

Jpn. J. Appl. Phys.

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Next-generation lithography will require an extreme-ultraviolet (EUV) light source that ensures high radiation intensities at a wavelength of around 13.5 nm. The characteristics of pinch dynamics and emission in this spectral range were studied experimentally for xenon capillary Z-pinch plasma driven by different dI=dt discharge current pulses. The pinch dynamics of the capillary Z-pinch plasma were examined by employing a high-speed camera, and the spectral emission from plasma was inspected using an EUV photodiode, a mini calorimeter and spectrometers. Our results confirm that high-dI=dt discharge current has better performance in comparison with the low one in terms of plasma dynamics, EUV power output and debris generation.

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CAPELLA: a kHz and low-debris capillary discharge EUV source

Cited by 7 publications

References 0 publications

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Discharge-based sources of XUV-X radiations: development and applications

Characteristics of Xenon Capillary Z-Pinch Extreme Ultraviolet Lithography Source Driven by Different dI/dt Discharge Current Pulses

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