Capless annealing of silicon implanted gallium arsenide

Grange, J. D.; Wickenden, DK

doi:10.1016/0038-1101(83)90129-6

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1983

1989

Publication Types

Select...

Article4

Book1

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 13 publications

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Rapid annealing of ion-implanted GaAs

Wesch

Götz

1986

phys. stat. sol. (a)

View full text Add to dashboard Cite

Because of the specific properties of GaAs, the annealing of implantation damage as well as the electric activation of dopants present more complez processes compared with silicon. Starting from the problems connected with conventional furnace annealing of GaAs, the results obtained with short time annealing in the solid and liquid phase are discussed. By means of liquid phase epitaxy using ns‐laser pulses, extremely high carrier concentrations can be achieved, but the mobility of the carriers is limited by matrix‐specific defects. Optical and RBS investigations give information about the defect types existing in pulsed laser irradiated GaAs layers, and the connection with the electrical properties of the layers is demonstrated. Possible ways for a reduction of the concentration of such defects as well as the improvement of the electrical properties are discussed.

show abstract