Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures

Dislocation‐related electronic states in partially strain‐relaxed InGaAs/GaAs heterostructures grown by MOVPE

“…Thus, the electronic states associated with misfit dislocations, attributed to the trap E1, are the "localized" ones. This is in agreement with the results of Yastrubchak et al [15] for the electron trap ED1 associated with misfit dislocations in lattice-mismatched InGaAs/GaAs heterostructures, grown by MBE. The emission characteristics obtained for the trap E1 show an excellent agreement with the level ED1, thus we believe they have the same origin.…”

“…Additionally, the precise evaluation of its activation energy could be slightly disturbed by a close location of the relatively large EL2 peak in DLTS spectrum (Fig. 4b) due to partial overlapping of both peaks [15].…”

Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique

“…In DLTS measurements, it manifests itself as a linear dependence of the peak amplitude on the logarithm of the filling-pulse duration (logarithmic capture law). This effect has been already observed for dislocations in plastically deformed Si [8,13] or GaAs [12] as well as in lattice-mismatched InGaAs/GaAs heterostructures grown by metalorganic vapor phase epitaxy (MOVPE) [14] and MBE [1]. On the other hand, the isolated point defects or impurities exhibit exponential capture kinetics (exponential capture law).…”

“…It is particularly detrimental to reliability and performance of devices. Both kinds of dislocations can give rise to energy level in the band gap acting as recombination centers or traps for free carriers [1].…”

Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement

“…Here, we show data for a 23 s −1 rate window when the sample was reverse biased at −1 V, and filling pulses of 1 V amplitude ͑to 0 V͒ with various lengths of time were applied. 15 The filled trap concentrations, which correspond to the signal amplitudes, are plotted in the inset of Fig. However, for this work, we will focus on the positive ͑minority carrier͒ peak at ϳ110 K that corresponds to an electron trap.…”