The
MoGe2P4 monolayer, an emerging semiconductor
with high carrier mobility, can be proposed as a promising channel
material in field effect transistors (FETs). The contact resistance
between MoGe2P4 and the metal electrode will
limit the performance of a realistic FET. Using density functional
theory (DFT) calculations, we explore the contact properties of a
MoGe2P4 monolayer with six bulk metal electrodes
(In, Ag, Au, Cu, Pd, and Pt). It is demonstrated that the Ohmic contacts
are formed in all MoGe2P4–metal contacts
due to the strong interfacial interactions, suggesting the high carrier
injection efficiency. In addition, the MoGe2P4–Cu, −Pd, and −Pt contacts present 100% tunneling
probability due to the absence of the tunneling barrier width. The
tunneling probabilities of the MGP–In, MGP–Ag, and MGP–Au
contacts are exceptionally higher than those of most other 2D semiconductors.
Moreover, the tunneling-specific resistivity of all MoGe2P4–metal contacts is relatively low, indicating
an ultralow contact resistance and excellent performance. These findings
provide a useful guideline to design high-performance MoGe2P4-based electronic devices.