2016
DOI: 10.1016/j.orgel.2016.01.020
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Capturing transiently charged states at the C 60 /TiO 2 (110) interface by time-resolved soft X-ray photoelectron spectroscopy

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Cited by 14 publications
(21 citation statements)
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“…46,47 The band gap was successfully determined to be 3.2 eV in the recent study of time-resolved photoelectron spectroscopy (TRPES). 48,49 According to the results of TRPES, TiO 2 bands were shown to bend downwardly from the bulk to the surface. The magnitude of downward band bending ranged from 0 to 0.8 eV, depending on the surface conditions such as surface-specic structures and the density and/or the type of surface defects.…”
Section: Extended Structures Of Vb Edgementioning
confidence: 99%
“…46,47 The band gap was successfully determined to be 3.2 eV in the recent study of time-resolved photoelectron spectroscopy (TRPES). 48,49 According to the results of TRPES, TiO 2 bands were shown to bend downwardly from the bulk to the surface. The magnitude of downward band bending ranged from 0 to 0.8 eV, depending on the surface conditions such as surface-specic structures and the density and/or the type of surface defects.…”
Section: Extended Structures Of Vb Edgementioning
confidence: 99%
“…In this context, it is important to note that the excited electrons have to reside inside the ZnO semiconductor to alter the space-charge balance and the resulting internal potential V bb (z). 17,29,30,33,40,43,44 The combination of the instantaneous dye oxidation described above and the delayed response of ΔE B (Zn 3d) therefore provides clear evidence for a transient retention of the excited charge carriers in ICT states, before their release into the CB, on an overall time scale of ≲1 ns. These findings align with previous observations of delayed charge separation due to the intermediate population of ICT configurations.…”
Section: (A) Delay δT = 2 Ns) Consists Of Two C O N T R I B U T I O N...mentioning
confidence: 84%
“…Closer inspection of the early time dynamics reveals a delayed rise of the ZnO-related trXPS signals compared to Δ E N3 ; see the inset in Figure (a). In this context, it is important to note that the excited electrons have to reside inside the ZnO semiconductor to alter the space-charge balance and the resulting internal potential V bb ( z ). ,,,,,, The combination of the instantaneous dye oxidation described above and the delayed response of Δ E B (Zn 3d) therefore provides clear evidence for a transient retention of the excited charge carriers in ICT states, before their release into the CB, on an overall time scale of ≲1 ns. These findings align with previous observations of delayed charge separation due to the intermediate population of ICT configurations. ,,, Within this framework, Δ E B (Zn 3d) and (Δ E B (C 1s) – Δ E N3 ) are solely governed by the time-dependent electron population in the CB of ZnO, P CB ( t ), whereas Δ E N3 is defined by the net hole population in the N3 monolayer.…”
mentioning
confidence: 99%
“…Recently, time-resolved XPS core-level photoemission measurements performed on donor/acceptor blends of TMC organic molecules and fullerenes [53,54] have shown that the core levels experience binding energy shifts after the systems are excited by a femtosecond optical pump.…”
Section: Thick Films (Intermolecular Interactions Perturb the Dynamics)mentioning
confidence: 99%