Carbide Contamination of Silicon Surfaces

Abstract

Reflection highenergy electron diffraction patterns of carbidecontaminated silicon surfaces

Electrical current through individual pairs of phosphorus donor atoms and silicon dangling bonds

“…Thereafter, a constant DC current (∼0.8 to 1.0 A) was passed through the sample for about 12 hours, increasing the sample temperature to ∼400 to 600 °C, and followed by a flash anneal during which the DC current inside the sample was increased from 0–4.2 A in 0.5 A steps at intervals of 5 s. At 4.2A, the constant current was maintained for 20–30 s before rapid thermal cooling was initiated. The flash process was repeated at least three times, a procedure during which the native oxide at the surface was subsequently removed from the surface and a reconstructed atomically clean flat surface 39 40 41 was left behind.…”

Low thermal budget in situ removal of oxygen and carbon on silicon for silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor

“…This is a curious finding since earlier reports on the subject suggest formation of a stable SiC layer upon annealing at high temperatures. 17 We believe that this contradictory result can be explained by the following argument: After an ex situ clean, C resides on the surface in the form of hydrocarbons. To form SiC on the surface, the first requirement is the dissociation of these hydrocarbons into H and elemental C. If this happens on a surface with no hydrogen passivation, C can fulfill the dangling bonds and become chemisorbed.…”

Localized perturbations in si-ge strained layers grown by mbe the ‘pagoda’ defect

“…10 (c)), leaving a pronounced conical depression there. A number of studies (Cullis and Booker 1971, Henderson, Marcus and Polito, 1971, Robbins et al 1987, Pidduck et al 1989) have shown that Sic particles can impede the flow of steps both during growth and dissolution of (loo} or (1 11) Si in vapour transport processes. At high growth temperatures (e.g.…”