2009
DOI: 10.1016/j.solmat.2008.02.026
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Carbon-doped Sb2S3 thin films: Structural, optical and electrical properties

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Cited by 64 publications
(63 citation statements)
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“…Further, the photovoltage rise and decay curve (not shown) reveals that the increase in photovoltage is almost instantaneous. The short circuit current and open circuit voltage (I SC and V OC , respectively) are measured as a function of light intensity (not shown) for the cell and a I SC shows an almost linear variation in relation to the light excitation level, which is in accordance with the theoretical background (Cao et al [21] ). It is important to emphasized here that the power conversion efficiencies were the same under 25 and 5 pct sun illumination and that the same behavior was observed, so the non-symmetric nature of the I-V curves in forward and reverse bias has been identified.…”
Section: B the Photovoltaic Output Characteristicssupporting
confidence: 81%
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“…Further, the photovoltage rise and decay curve (not shown) reveals that the increase in photovoltage is almost instantaneous. The short circuit current and open circuit voltage (I SC and V OC , respectively) are measured as a function of light intensity (not shown) for the cell and a I SC shows an almost linear variation in relation to the light excitation level, which is in accordance with the theoretical background (Cao et al [21] ). It is important to emphasized here that the power conversion efficiencies were the same under 25 and 5 pct sun illumination and that the same behavior was observed, so the non-symmetric nature of the I-V curves in forward and reverse bias has been identified.…”
Section: B the Photovoltaic Output Characteristicssupporting
confidence: 81%
“…This type of behavior has also been observed in many other chalcogenides. [35] So far, the reported optical band gap energies for Sb 2 S 3 thin films are in the range 1.67 to 2.57 eV [16,[18][19][20][21][22]24] generally obtained before and after annealing, respectively. Figure 4 shows the room-temperature photoluminescence (PL) spectra of both Sb 2 S 3 amorphized (A) and polycrystalline thin films in the energy range of 2.4 to 1.5 eV, respectively.…”
Section: A the Characterization Of Sb 2 S 3 Thin Filmsmentioning
confidence: 99%
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“…Because of these useful properties, considerable efforts have been devoted to the fabrication of Sb 2 S 3 films and controlled synthesis of 1D Sb 2 S 3 nanostructures, as well as more complex assemblies. Various Sb 2 S 3 films have been fabricated by different methods, such as chemical bath deposition, [24] thermal evaporation, [25] and spray pyrolysis techniques. [26] .…”
Section: Introductionmentioning
confidence: 99%
“…It has been found that selenium based alloy are useful due to their greater hardness, high photosensitivity, higher crystallization temperature and small ageing effect as compare to pure Se. Different techniques are used for the preparation of thin films such as thermal evaporation technique [13] chemical bath deposition [14] chemical vapor deposition [15] rf/dc sputtering [16]. The properties mostly depend on the preparation and deposition technique.…”
Section: Introductionmentioning
confidence: 99%