Carbon Heating Tube Used for Rapid Heating System for Semiconductor Annealing

Miyazaki, Tomoyoshi; Kobayashi, Go; Sugawara, Takashi; Kikuchi, Toshitaka; Hasumi, Masahiko; Sameshima, Toshiyuki

doi:10.23919/am-fpd.2018.8437399

Cited by 2 publications

(1 citation statement)

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“…In order to realize a convenient heating source, we developed a lamp of carbon heating tube (CHT), in which 2-µm-diameter-carbon powders were filled with inert gas in a quartz tube whose edges were then closed by thermal welding. The carbon powders in the CHT effectively absorb microwave and heat to a high temperature with no loss of carbon powers via oxidation [20].…”

Section: Introductionmentioning

confidence: 99%

Carbon Heating Tube Used for Rapid Heating System

Sameshima

Miyazaki²,

Kobayashi³

et al. 2019

IEEE Access

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We report a microwave heating system with a carbon heating tube (CHT) which was made by a 4-mm diameter quartz tube filled with carbon particles and Ar gas at 1400 Pa. A 60-mm-long CHT was set in a cavity in which 2.45-GHz microwave was introduced. Via nearly complete absorption of a microwave power of 200 W by carbon in the CHT during multi-reflection of the microwave in the cavity, the CHT was effectively heated to 1279 • C at 33 s after the microwave initiation, which was observed by the radiationtype thermometer. Moreover, the control of the CHT temperature was demonstrated with a home-made proportional-integral-differential feedback circuit which regulated the magnetron power source using a signal of the thermometer. The control of temperature at 1100 • C was successfully realized. Crystallization of a 58-nm-thick amorphous silicon thin film formed on the glass substrate was demonstrated by mechanically moving the silicon sample just below the heated CHT. A high crystalline volume ratio of 0.92 was achieved. Furthermore, heating of 500-µm-thick-n-type silicon substrate implanted with 1.0 × 10 15 cm −2 phosphorus and boron atoms with the CHT resulted in activation of the doped regions. Rectified diode characteristics were achieved. INDEX TERMS Electromagnetic interference, heat treatment, low-microwave power electronics, PID temperature control, silicon.

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Section: Introductionmentioning

confidence: 99%