Carbon-Isovalent Dopant Pairs in Silicon: A Density Functional Theory Study
Stavros-Richard G. Christopoulos,
Efstratia N. Sgourou,
Alexander Chroneos
et al.
Abstract:Carbon (C) is an important isovalent impurity in silicon (Si) that is inadvertently added in the lattice during growth. Germanium (Ge), tin (Sn), and lead (Pb) are isovalent atoms that are added in Si to improve its radiation hardness, which is important for microelectronics in space or radiation environments and near reactors or medical devices. In this work, we have employed density functional theory (DFT) calculations to study the structure and energetics of carbon substitutional-isovalent dopant substituti… Show more
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