Carbon Nano-particle Synthesized by Pulsed Arc Discharge Method as a Light Emitting Device

Ahmadi, Ramin; Ahmadi, Mohammad Taghi; Ismail, Razali

doi:10.1007/s11664-018-6285-7

Cited by 9 publications

(8 citation statements)

References 27 publications

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“…In the last decade, most efforts of nanotechnology researchers have been devoted to the study and characterization of electronic properties of graphene [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. Indeed, graphene is a two-dimensional honeycomb structure with high electron mobility and stable lattice which has different classifications [ 8 , 9 , 10 , 11 ], such as graphene nanoscroll, twisted graphene, graphene nanoribbon, and few-layer graphene [ 12 , 13 , 14 , 15 , 16 , 17 ]. Among these different types of graphene, twisted graphene is a new class and interesting [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Monolayer Twisted Graphene-Based Schottky Transistor

Ahmadi

Koloor

et al. 2021

Materials

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The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.

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Section: Introductionmentioning

confidence: 99%

Monolayer Twisted Graphene-Based Schottky Transistor

Ahmadi

Koloor

et al. 2021

Materials

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“…In this paper, a new nanofiber is produced by our novel customized [19]. According to the insulation performance of polystyrene and its simple production methods, polystyrene based fibers are focused.…”

Section: Introductionmentioning

confidence: 99%

Polymer Concentration Effect on Nanofiber Growth Using Pulsed Electrospinning

Torfifard¹,

Norian²,

Ahmadi³

et al. 2019

Polym Sci

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In this paper, a new electrospinning device is designed and fabricated based on the pulsed system. The general model of electrospinning process is represented. Moreover, the produced nanofibers are characterized by Scanning Electron Microscopy (SEM) and Fourier Transform Infrared (FTIR). The effects of concentration and voltage depended on the collector rotation are investigated on the electrospinning process. The three different polystyrene solutions with the three various voltages are used to produce several polymer nanofibers. The experimental results reveal that the increase in polymer concentration enlarges the thickness of nanofiber while increase in applied voltage causes to decrease the nanofiber thickness. The results are compared with similar research. For our research, we applied the 10 KV voltage instead of 20 KV voltage as indicated in the literature. The measured results show that the proposed model has good adjacency with respect to analytical and experimental data.

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“…Also the CNPs able to become a new light emitting diode (LED) device after silicon. This new application are explored by Ahmadi et al where they successfully demonstrates their CNPs which can emit light after applied high current and electric field towards the CNPs [8]. The CNPs can be fabricated using arc discharge plasma which was explored by a group of researchers who investigated the radiation detector technology [9].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characteristics of Carbon Nanotube Using Plasma Arc Discharge

2018

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Carbon nanoparticles (CNP) were synthesized in arc plasma discharge using a simple, low-cost and toxic-free precursor gas. The structural and electrical characteristics were examined. The diameter and the height of the grown CNP was 28.5 μm and 316.7 μm , respectively. SEM image showed existence of a high density and uniform nanostructures within the cylindrical bulk CNP tube. The average diameter of the nanoparticles is 600 nm. The electrical characteristics revealed low resistance with R = 7.23 mΩ with Cu electrodes. In addition, the device exhibited a high conductivity of 6.8 x 105 Scm-1. These results indicate the potential of CNP material for power device applications.

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Carbon Nano-particle Synthesized by Pulsed Arc Discharge Method as a Light Emitting Device

Cited by 9 publications

References 27 publications

Monolayer Twisted Graphene-Based Schottky Transistor

Monolayer Twisted Graphene-Based Schottky Transistor

Polymer Concentration Effect on Nanofiber Growth Using Pulsed Electrospinning

Synthesis and Characteristics of Carbon Nanotube Using Plasma Arc Discharge

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