2023
DOI: 10.1002/advs.202207229
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Carbon Nanodots Memristor: An Emerging Candidate toward Artificial Biosynapse and Human Sensory Perception System

Abstract: In the era of big data and artificial intelligence (AI), advanced data storage and processing technologies are in urgent demand. The innovative neuromorphic algorithm and hardware based on memristor devices hold a promise to break the von Neumann bottleneck. In recent years, carbon nanodots (CDs) have emerged as a new class of nano-carbon materials, which have attracted widespread attention in the applications of chemical sensors, bioimaging, and memristors. The focus of this review is to summarize the main ad… Show more

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Cited by 30 publications
(12 citation statements)
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“…, artificial synapses and artificial neurons) is crucial for constructing neuromorphic computing systems capable of overcoming the von Neumann bottleneck in this post-Moore's law era. 71,72,74,75,89,393,394,479,480 Up to now, various devices, including memristor, 70,72,73,481–488 flash memory, 285,489–492 EG-FET, 293,295,296,489,490,493–496 and memtransistor, 497–499 based on different functional materials, 484,500,501 such as 2D materials, 85–88,387,502–508 perovskite, 76–80,389,509,510 biomaterials, 81,82 TMO, 385,511–513 and organic materials, 71,90,514,515 have been utilized for neuromorphic devices.…”
Section: Porous Crystalline Materials For Neuromorphic Devicesmentioning
confidence: 99%
See 1 more Smart Citation
“…, artificial synapses and artificial neurons) is crucial for constructing neuromorphic computing systems capable of overcoming the von Neumann bottleneck in this post-Moore's law era. 71,72,74,75,89,393,394,479,480 Up to now, various devices, including memristor, 70,72,73,481–488 flash memory, 285,489–492 EG-FET, 293,295,296,489,490,493–496 and memtransistor, 497–499 based on different functional materials, 484,500,501 such as 2D materials, 85–88,387,502–508 perovskite, 76–80,389,509,510 biomaterials, 81,82 TMO, 385,511–513 and organic materials, 71,90,514,515 have been utilized for neuromorphic devices.…”
Section: Porous Crystalline Materials For Neuromorphic Devicesmentioning
confidence: 99%
“…Therefore, the development of neuromorphic electronics with exceptional memory capacity, high computational power, multi-functionality, and low energy consumption is of paramount importance. Up to now, various functional materials including perovskites, 76–80 biomaterials, 81–83 two-dimensional (2D) materials, 84–88 and quantum dots (QDs) 89,90 have been applied for exploring multi-functional memory/neuromorphic devices. In comparison to other materials, porous crystalline materials possess unparalleled porosity and exceptional customizability, which equip them with a diverse range of outstanding properties (such as mechanical strength, ionic/electronic conductivity, optoelectronics, adsorption capacity, and stability) through guest loading, structural/compositional design, and post-synthetic modification.…”
Section: Introductionmentioning
confidence: 99%
“…Carbon dots (CDs) are a new type of “zero-dimensional” fluorescent carbon materials, which have received extensive attention since their accidental discovery in 2004 . CDs have broad applications in bioimaging, therapy, LED, catalysis, and sensing because of their outstanding properties, including easy preparation, tunable FL emission, eminent photostability, and excellent biocompatibility. , The CDs-based sensors have been used for the detection of ions , and small moleculars; , however so far, most reported fluorescence sensors of CDs were based on signal variations to detect analytes through fluorescence quenching, resulting in poor reliability, low sensitivity, and false positives. Thus, the development of a ratiometric fluorescence sensor is extremely desirable.…”
Section: Introductionmentioning
confidence: 99%
“…25,26 There are also reports on carbon dots, hydrogen-bonded organic frameworks and graphene oxide based memristive devices. 27–29 Among the most commonly used switching materials, metal oxide based switching devices have fascinated the scientific world due to the low power consumption, fast switching and low operating voltages. Transition Metal Oxides (TMOs) belong to the category of materials beyond graphene and, among them, TiO 2 , 30,31 WO 3 , 32 VO 2 , 33,34 STO, 35–37 ZnO 38 and HfO 2 39 have been used as active materials exhibiting reversible resistive switching behaviour for non-volatile memory (NVM) device applications.…”
mentioning
confidence: 99%