Carbon-nanoparticle-assisted growth of high quality bilayer WS2 by atmospheric pressure chemical vapor deposition

Liang, Jieyuan; Zhang, Lijie; Li, Xiaoxiao; Pan, Baojun; Luo, Tingyan; Boutat, Driss; Zou, Chao; Liu, Nannan; Hu, Yue; Yang, Keqin; Huang, Shaoming

doi:10.1007/s12274-019-2516-3

Cited by 19 publications

(15 citation statements)

References 43 publications

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“…These carbon patches or ‘carbon nanostructures’ are expected to act as heterogeneous nucleation sites; where nucleation takes place via sulfurization of adjoining WO 3- x molecules. The synthesis kinetics involve heterogeneous and homogeneous nucleation reactions, occurring simultaneously and competing with each other, as the main growth processes [ 61 , 62 ]. Initially, due to a lower surface free-energy barrier, heterogeneous nucleation outpaces the homogeneous nucleation [ 59 ].…”

Section: Resultsmentioning

confidence: 99%

“…Nonetheless, a complete understanding of growth mechanics warrants further investigations. The growth process can be summarized in the following chemical reactions [ 61 , 62 ]: WO 3 +( x /2)C → WO 3−x + ( x /2)CO 2 , WO 3 + ( x /2)S → WO 3−x + ( x /2)SO 2 , WO 3−x + (7 − x )/2S → WS 2 + (3 − x )/2SO 2 . …”

Section: Resultsmentioning

confidence: 99%

“…Nonetheless, a complete understanding of growth mechanics warrants further investigations. The growth process can be summarized in the following chemical reactions [61,62]:…”

Section: Second Approach: Uniform Growth Of Ws 2 Flakes On Spin-coatementioning

confidence: 99%

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Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS2 Growth to Facilitate Mass Scale Device Production

et al. 2021

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Growth of monolayer WS2 of domain size beyond few microns is a challenge even today; and it is still restricted to traditional exfoliation techniques, with no control over the dimension. Here, we present the synthesis of mono- to few layer WS2 film of centimeter2 size on graphene-oxide (GO) coated Si/SiO2 substrate using the chemical vapor deposition CVD technique. Although the individual size of WS2 crystallites is found smaller, the joining of grain boundaries due to sp2-bonded carbon nanostructures (~3–6 nm) in GO to reduced graphene-oxide (RGO) transformed film, facilitates the expansion of domain size in continuous fashion resulting in full coverage of the substrate. Another factor, equally important for expanding the domain boundary, is surface roughness of RGO film. This is confirmed by conducting WS2 growth on Si wafer marked with few scratches on polished surface. Interestingly, WS2 growth was observed in and around the rough surface irrespective of whether polished or unpolished. More the roughness is, better the yield in crystalline WS2 flakes. Raman mapping ascertains the uniform mono-to-few layer growth over the entire substrate, and it is reaffirmed by photoluminescence, AFM and HRTEM. This study may open up a new approach for growth of large area WS2 film for device application. We have also demonstrated the potential of the developed film for photodetector application, where the cycling response of the detector is highly repetitive with negligible drift.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS2 Growth to Facilitate Mass Scale Device Production

et al. 2021

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“…The nucleation and growth mechanism of CVD differs in each synthetic process as the generation of 2D WS 2 lies in (1) vapor sources, (2) temperature, (3) atomic gas flux and (4) substrates. In case of the vapor sources, metal containing precursors (e.g., WS 2 [59], WO 3 [39,[60][61][62][63], WCl 6 [64], WF 6 [65,66] and W(CO) 6 [67]) are vaporized and then react with sulpur containing elements (S [39,68,69], H 2 S [63,65,66]) through vapor-solid reactions, leading to the growth of 2D WS 2 nanosheets on the substrate downstream. Generally, WO 3 is always the first choice as a cheap and easily handled precursor with relatively low melting and evaporation temperature [70].…”

Section: Gas-phase Synthesismentioning

confidence: 99%

“…Recently, Lan et al [83] found that by introducing NaOH as the promoter, the single-domain size of monolayer WS 2 was capable of reaching a high value of 550 μm. In addition, various types of materials such as carbon nanoparticles [60], ZnO [84], alkali metals [85], and metal sulfides [86,87], also With the continuous upsurge of 2D materials research, the gas-phase synthesis is extensively studied for scalable and reliable production of large area 2D WS 2 . Especially recently, with fast development of the advanced manufacturing technologies, more attempts have been made to fabricate high-quality WS 2 with thickness controllability and lateral dimension uniformity.…”

Section: Gas-phase Synthesismentioning

confidence: 99%

Tungsten disulfide: synthesis and applications in electrochemical energy storage and conversion

et al. 2020

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Recently, two-dimensional transition metal dichalcogenides, particularly WS 2 , raised extensive interest due to its extraordinary physicochemical properties. With the merits of low costs and prominent properties such as high anisotropy and distinct crystal structure, WS 2 is regarded as a competent substitute in the construction of next-generation environmentally benign energy storage and conversion devices. In this review, we begin with the fundamental studies of the structure, properties and preparation of WS 2 , followed by detailed discussions on the development of various WS 2 and WS 2-based composites for electrochemical energy storage and conversion applications. In the end, some prospective prospects and promising developments of WS 2 in these fields are proposed.

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2D WS₂: From Vapor Phase Synthesis to Device Applications

Lan

et al. 2020

Adv Elect Materials

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The discovery of graphene has triggered the research on 2D layer structured materials. Among many 2D materials, semiconducting transition metal dichalcogenides (TMDs) are widely considered to be the most promising ones due to their excellent electrical and optoelectronic characteristics. Tungsten disulfide (WS2) is a kind of such TMDs with fascinating properties, such as the high carrier mobility, appropriate band gap, strong light–matter interaction with the large light absorption coefficient, very large exciton binding energy, large spin splitting, and polarized light emission. All these interesting properties can make the 2D WS2 being highly favorable for applications in memristors, light‐emitting devices, optical modulators, and many others. Here, the comprehensive review on the properties, vapor phase synthesis, electronic and optoelectronic applications of 2D WS2 is presented. This review does not only serve as a design guideline to elevate the material quality of 2D WS2 films via enhanced synthesis approaches, but also provides valuable insights to various strategies to improve their device performances. With the fast development of wafer‐scale synthesis methods and novel device structures, 2D WS2 can undoubtedly be a rising star for the next‐generation devices in the near future.

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Carbon-nanoparticle-assisted growth of high quality bilayer WS2 by atmospheric pressure chemical vapor deposition

Cited by 19 publications

References 43 publications

Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS2 Growth to Facilitate Mass Scale Device Production

Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS2 Growth to Facilitate Mass Scale Device Production

Tungsten disulfide: synthesis and applications in electrochemical energy storage and conversion

2D WS₂: From Vapor Phase Synthesis to Device Applications

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Carbon-nanoparticle-assisted growth of high quality bilayer WS2 by atmospheric pressure chemical vapor deposition

Cited by 19 publications

References 43 publications

Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS2 Growth to Facilitate Mass Scale Device Production

Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS2 Growth to Facilitate Mass Scale Device Production

Tungsten disulfide: synthesis and applications in electrochemical energy storage and conversion

2D WS2: From Vapor Phase Synthesis to Device Applications

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2D WS₂: From Vapor Phase Synthesis to Device Applications