Carbon Nanotube- and Graphene Based Devices, Circuits and Sensors for VLSI Design

Vargas-Bernal, Rafael; Herrera-Pérez, Gabriel

doi:10.5772/38743

Cited by 13 publications

(7 citation statements)

References 124 publications

(92 reference statements)

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“…In future, CNTs would be used as an attractive material for VLSI device components. CNT and graphene-based hybrid materials and composite materials would be given more priority in optoelectronic devices, electrical contacts, interconnects, sensors, and circuits [44][45][46][47]. Even though CNTs shows promising results for electrical interconnect applications, full implementation of these CNT electrical interconnects in electronic circuits, and Integrated circuits (IC) would take another few years.…”

Section: Discussionmentioning

confidence: 99%

Power Withstanding Capability and Transient Temperature of Carbon Nanotube-Based Nano Electrical Interconnects

Robert¹

2021

ECS J. Solid State Sci. Technol.

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This paper exhibits the electrothermal modelling and evaluation of Carbon Nanotube (CNT) based electrical interconnects for electronic devices. The continuum model of the CNT is considered and the temperature across interconnect is predicted for the given power. Finite element modelling software COMSOL Multiphysics is used to carry out the simulations. The results are compared with Al and Cu interconnects. An electrothermal analysis is also carried out to obtain the temperature for the given power for Single-Walled CNT, Double-Walled CNT, Triple-Walled CNT, and Multi-Walled CNT. Results show that the CNT interconnects performs better when compared to Al and Cu interconnects. The power withstanding capability of CNT is 68.75 times more than Al and 32.35 times more than Cu. Based on the transient analysis, the time taken by the CNT interconnects to reach a steady temperature is obtained as 0.007 ns. On the application of power, Cu and Al interconnects takes 0.1 ns to reach the steady-state temperature. The nanostructured CNT based electrical interconnects would play a considerable role in replacing Cu and Al electrical interconnect applications for micro and nanoelectronic devices.

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Section: Discussionmentioning

confidence: 99%

Power Withstanding Capability and Transient Temperature of Carbon Nanotube-Based Nano Electrical Interconnects

Robert¹

2021

ECS J. Solid State Sci. Technol.

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“…These devices can work in the submillimetre and terahertz region [8]. Four different configurations to implement GFETs were proposed, such as back-gate GFETs, top-gate GFETs, wrap-around GFETs and suspended GFETs to design electronic devices; unfortunately, wrap-around GFETs still have no real implementation [23]. The readers are suggested to read the previous work for more details about the GFETs.…”

Section: Electrical Properties Of the Graphene And Basic Devicesmentioning

confidence: 99%

“…It has an extraordinary carrier mobility of ~500,000 cm 2 /Vs and its electronic properties are strongly related to its thickness [22]. Due to its high electrical and thermal conductivity (5000 Wm/K) and low electrical noise, graphene is considered as an interesting alternative to copper for electrical interconnects in integrated circuits to connect electronic devices [23,24]. Vertical and horizontal interconnections can be implemented using zigzag graphene nanoribbons, where horizontal connections are more feasible.…”

Section: Electrical Properties Of the Graphene And Basic Devicesmentioning

confidence: 99%

“…Several layers of interconnects are required between devices; these can be horizontal and/or vertical [24,48]. A vertical interconnection is called via; it is used to make connections between different horizontal levels in an integrated circuit to connect device to device, device to system or system to system [23]. For interconnecting applications, zigzag GNR is proposed for the future generation of VLSI circuits, due to its metallic property [5,48].…”

Section: Electrical Properties Of the Graphene And Basic Devicesmentioning

confidence: 99%

“…Particularly, this parameter establishes the performance that, for example, graphene-based field-effect transistors (GFETs) will achieve [25]. In addition, configurations such as those based on top gate (TG) and where materials for oxide with high dielectric constants (k) are used onto or under graphene [17,[26][27][28][29], configurations with suspended graphene [23,28,[30][31][32] or substrate-less graphene, or at encapsulating (embedding) graphene in dielectric materials, such as boron nitride, with lattice matched [28,[33][34][35], have maximal mobility. When graphene is embedded in dielectric materials, the strong Coulomb scattering increases the electrical mobility [28].…”

Section: Electrical Properties Of the Graphene And Basic Devicesmentioning

confidence: 99%

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State-of-the-Art Electronic Devices Based on Graphene

Vargas-Bernal¹

2016

Nanoelectronics and Materials Development

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Graphene can be considered as the material used for electronic devices of this century, due to its excellent physical and chemical properties, which have been studied and implemented from a theoretical basis and have allowed the development of unique and innovative applications. The need for an ongoing study of the state-of-the-art electronic devices is ultimately useful for the progress achieved so far and future project applications. To date, graphene has been used individually in composite, hybrid materials or functional materials. In this chapter, an overview of their applications in nanoelectronics, particularly with an emphasis directed to flexible electronics, is presented. The description of the advantages and properties of graphene at a level of materials science and engineering is presented, in order to spread its enormous potential. In addition, the future prospects of these applications arising from the developments made currently in the laboratory phase are examined.

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Nanomaterials

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Carbon Nanotube- and Graphene Based Devices, Circuits and Sensors for VLSI Design

Cited by 13 publications

References 124 publications

Power Withstanding Capability and Transient Temperature of Carbon Nanotube-Based Nano Electrical Interconnects

Power Withstanding Capability and Transient Temperature of Carbon Nanotube-Based Nano Electrical Interconnects

State-of-the-Art Electronic Devices Based on Graphene

Nanomaterials

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