Carbon Nanotube Array Thermal Interfaces for High-Temperature Silicon Carbide Devices

Abstract

Follow this and additional works at: http://docs.lib.purdue.edu/nanopub This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact epubs@purdue.edu for additional information.Cola, Baratunde A.; Xu, Xianfan; Fisher, Timothy; Capano, Michael A.; and Amama, Placidus B., "Carbon nanotube array thermal interfaces for high-temperature silicon carbide devices" (2008 Full terms and conditions of use: http://www.informaworld.com/terms-and-conditions-of-access.pdf This article may be used for research, teaching and private study purposes. Any substantial or systematic reproduction, re-distribution, re-selling, loan or sub-licensing, systematic supply or distribution in any form to anyone is expressly forbidden.The publisher does not give any warranty express or implied or make any representation that the contents will be complete or accurate or up to date. The accuracy of any instructions, formulae and drug doses should be independently verified with primary sources. The publisher shall not be liable for any loss, actions, claims, proceedings, demand or costs or damages whatsoever or howsoever caused arising directly or indirectly in connection with or arising out of the use of this material. , and the room-temperature thermal resistances of SiC-MWCNT-Ag interfaces at 69-345 kPa as well as the thermal resistances of SiC-MWCNT-Ag interfaces up to 250 C (at 69 kPa) have been measured using a photoacoustic technique. The SiC-MWCNT-Ag interfaces with MWCNTs grown on the C-face of SiC achieved thermal resistances less than 10 mm 2 K/W, which is lower than the resistances of MWCNT interfaces grown using the same catalysis and growth methods on the Si-face of SiC and Ti-coated SiC. The thermal resistances of the SiC-MWCNT-Ag interfaces exhibit weak temperature dependence in the measured range, indicating that the interfaces are suitable for high-temperature power electronics applications. CARBON NANOTUBE ARRAY THERMAL INTERFACES FOR HIGH-TEMPERATURE SILICON CARBIDE DEVICES

Temperature-dependent thermal properties of single-walled carbon nanotube thin films

“…21 Other reports have demonstrated the CNT-substrate thermal boundary resistance for vertically aligned carbon nanotube arrays and different substrates, e.g., SiO 2 22 or SiC. 23 However, until now, there are no studies of the interfacial contact conductance between horizontally aligned CNT thin films and the substrate.…”

Carbon Nanotube Coatings for Enhanced Capillary-Fed Boiling from Porous Microstructures

“…Integrated use of CNTs for thermal management of heat dissipation from electronic devices has been extensively explored due to the extremely high thermal conductivity of CNTs determined both theoretically [2,3] and experimentally [4][5][6][7][8], and has led to the enhancement of multiple technologies spanning the consumer, military, and automotive electronics industries. Such applications include reduction of thermal resistance at interfaces between components [9][10][11][12][13], development of novel composite materials with increased thermal conductivity [14][15][16][17], and improvement of pool boiling heat transfer [18][19][20][21]. Increasingly high-density heat dissipation from nextgeneration electronics motivates further investigation of novel heat transfer enhancement strategies which can be readily integrated into practical devices.…”

β-Zn4Sb3Nanocantilevers and Their Thermoelectric Properties

“…To verify the reproducibility of the low thermal conductivity in nanostructures, multiple samples were prepared in different batches, and consistently low values, ranging from 0.58 to 0.98 W/m•K at room temperature, were routinely recorded. The conductivities k (Figure 3a) of the as-obtained nanocantilevers and conventional powders were very low (0.58 and 0.98 W/K m at 300 K, respectively), in which they decreased with increasing temperature (0.37 and 0.43 W/K m at 675 K, respectively) and minimized the thermal conductivity possible from promoting phonon scattering and localization [45][46][47][48][49][50]. The Seebeck coefficient S and electrical conductivity σ are presented in Figures 3b and 3c, respectively, in which the Seebeck coefficients of all samples are positive and a weak semimetal temperature behavior can be seen.…”

“…As an earlier report [43], β-Zn 4 Sb 3 was found to be stable when heated to high temperatures since Zn 3 Sb 2 failed to form. It can be seen that the thermal conductivity of the nanocantilevers is comparable to that of conventional powders [43][44][45][46][47][48][49][50]. To verify the reproducibility of the low thermal conductivity in nanostructures, multiple samples were prepared in different batches, and consistently low values, ranging from 0.58 to 0.98 W/m•K at room temperature, were routinely recorded.…”