Carbon nanotube assisted Lift off of GaN layers on sapphire

Long, Haitao; Feng, Xiaohui; Wei, Yang; Yu, Tongjun; Fan, Shanhui; Ying, Leiying; Zhang, Baoping

doi:10.1016/j.apsusc.2016.10.148

Cited by 10 publications

(5 citation statements)

References 26 publications

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“…The FWHM of (002) and (102) planes increased as the CNT layers changed from 2, 3, 5 to 0 CNT, in that order. This phenomenon was also in agreement with our previous results [6][7][8][9][10]20]. To investigate the reduction of SRH coefficient A, we performed SEM at the initial nucleation and coalesced stage of GaN material on 2 CNTPS, and TEM of GaN/CPNTPS interface (figure S5 (available online at https://stacks.iop.org/SST/35/115013/mmedia)).…”

Section: Experiments and Resultssupporting

confidence: 89%

Impact of carbon nanotube pattern layers on gallium nitride-based light emitting diodes

Tian¹,

Feng²,

Long³

et al. 2020

Semicond. Sci. Technol.

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Patterned sapphire substrate has been used extensively in the growth of gallium nitride (GaN) material and related light emitting devices (LEDs). Recently, carbon nanotube patterned sapphire (CNTPS) was utilized to improve the GaN material and LED devices. In this article, intrinsic analyzation of LEDs on CNTPS were studied. LEDs grown on three layers of CNTs showed highest radiative quantum efficiency and internal quantum efficiency, while LEDs on double layers of CNTs exhibited the best light output power and external quantum efficiency. The physics of carriers’ injection, radiative, non-radiative, Auger recombination and light extraction in CNT patterned LEDs were unraveled by the ‘ABC’ modelsimulation.

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Section: Experiments and Resultssupporting

confidence: 89%

Impact of carbon nanotube pattern layers on gallium nitride-based light emitting diodes

Tian¹,

Feng²,

Long³

et al. 2020

Semicond. Sci. Technol.

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“…This is because the light absorption coefficient of carbon nanotubes is higher than that of GaN, so that the external heat emitted by the heat‐concentrated CNT lowers the ablation threshold of GaN. [ 52 ] For large‐area exfoliation from the transparent carrier without damaging the device layers, a flash lamp with long pulse width (150 µs) was used to heat the metal‐based responsive layer (TiW, 250 nm) to rapidly separate the polymer film from the rigid carriers. It is worth mentioning that the responsive layer interface reaches 865 °C during the exfoliation process, while the top surface of PI is only 118 °C, which is enough to avoid thermal damage or feature degradation of the ultrathin device layer.…”

Section: Mechanisms Of Laser Lift‐off Technologiesmentioning

confidence: 99%

“…This is because the light absorption coefficient of carbon nanotubes is higher than that of GaN, so that the external heat emitted by the heatconcentrated CNT lowers the ablation threshold of GaN. [52] For large-area exfoliation from the transparent carrier without damaging the device layers, a flash lamp with long pulse width d-g) Reproduced with permission. [46] Copyright 2016, Wiley.…”

Section: The Mechanism Dominated By the Photothermal Effectmentioning

confidence: 99%

Laser Lift‐Off Technologies for Ultra‐Thin Emerging Electronics: Mechanisms, Applications, and Progress

Wang

Liu

Jian-wen³

et al. 2022

Adv Materials Technologies

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“…The GaN‐based devices are necessarily fabricated on sapphire substrates. Recently, this kind of LLO has been intensively investigated for transferring the GaN‐based devices to new substrates . By replacing the original sapphire substrate, GaN‐based devices will have better heat and electrical conductivity, which is a simple and practical approach to improve device performance.…”

Section: Laser Lift‐off Processmentioning

confidence: 99%

“…Pulsed IR laser irradiation can travel through GaN layers from the top but be strongly absorbed by InN layers, which leads to the controlled decomposition of the sacrificial layer and followed by an easy separation of the GaN film with high quality . Another attempt is inserting CNT bundles into GaN‐sapphire interface . Due to the higher laser absorption of CNT, the CNT acts as a powerful heating wire to conduct heat to elevate the GaN temperature thus reducing the laser threshold for LLO (from 1.5 to 1.3 J cm −2 ).…”

Section: Laser Lift‐off Processmentioning

confidence: 99%

Laser Transfer, Printing, and Assembly Techniques for Flexible Electronics

Bian

Zhou

Wan

et al. 2019

Adv Elect Materials

112

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materials and enable innovative applications that are hard to achieve with current microelectronics. Examples vary from biointegrated devices for clinical diagnosis and treatment, [11][12][13] to electronic skin (E-Skin), [14][15][16] energy harvesting/storage devices, [17][18][19][20][21] and sweat sensor, [22,23] to flexible display, [24,25] and to RFID tags, [26,27] etc.Two main kinds of microfabrication processes have been developed for flexible electronics, including the solutionprocessable methods and vacuum-based methods (lithographic patterning and undercut etching). [28] The former is naturally compatible with flexible substrates and can deposit and pattern functional materials in one single step. [29][30][31] They have fabricated various printed electronics with increasing performance, such as conductive metal wires, [32][33][34] thin film transistors (TFTs), [35][36][37] and piezoelectric devices. [38][39][40][41] However, the electronic performance is still limited by the properties of solution-processable functional materials and low resolution of printing techniques, with respect to standard microfabrication process. [42] On the other side, vacuum-based microfabrication techniques provide wellestablished routes to realize high-performance electronics, but generally incompatible with large-area, flexible (polymeric substrates). Ideally, high performance flexible electronics systems are usually fabricated by built-up process that begins with independent fabrication of high-modulus, fragile, chip-scale elements (e.g., IC chips, MEMS, sensors, and power sources) or flexible devices (e.g., flexible sensor, flexible display, and TFT array) on donor wafers, followed by being transferred onto flexible/stretchable substrates.The above manufacturing routes of flexible electronics can be concluded as the transfer of the materials, components, and devices from original fabricated/prepared substrates to flexible ones. The most significant built-in challenge in transferring is to control of interface status to accommodate to the disparate nature of the transferred objects from donor wafer/substrate. Distinctive assembly techniques based on stress-induced interface fracture have been invented to be adaptive to the diversity of material properties and geometric sizes that lead to tremendous differences in mechanical properties. For those conventional rigid electronic components like IC chips, they are transferred by standard single-ejector needle pick-and-place It is challenging to manufacture large-area, ultrathin, flexible/stretchable electronics on an industrial scale. Recent ground-breaking advances in the manufacture of flexible electronics are based on powerful laser processes. Laser irradiation at an internally absorbing interface through a transparent substrate will bring various physical changes and chemical reactions at the interface, accompanied by distinct phenomena. Numerous techniques derived from these phenomena with the unique ability to fabricate materials, structures, and devices on flexible subst...

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Carbon nanotube assisted Lift off of GaN layers on sapphire

Cited by 10 publications

References 26 publications

Impact of carbon nanotube pattern layers on gallium nitride-based light emitting diodes

Impact of carbon nanotube pattern layers on gallium nitride-based light emitting diodes

Laser Lift‐Off Technologies for Ultra‐Thin Emerging Electronics: Mechanisms, Applications, and Progress

Laser Transfer, Printing, and Assembly Techniques for Flexible Electronics

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