Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

Liu, Yang; Wang, Sheng; Liu, Huaping; Peng, Lian‐Mao

doi:10.1038/ncomms15649

Cited by 69 publications

(65 citation statements)

References 38 publications

(74 reference statements)

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“…8,[10][11][12] Optical interconnects and silicon photonics are two key technologies for next-generation communication, and nano-carbon materials are regarded as one of the possible candidates for integrated optoelectronic devices because they can be easily integrated on silicon chips. 2,4,6,9,13,14 Graphene light emitters integrated on silicon chips are being developed as an alternative to conventional light sources based on compound semiconductors. 15 The thermal radiation generated by transforming an electrical current into Joule heat in graphene was rstly observed by Freitag et al 16 The emission spectra from graphene are well modelized by the formula for a grey body (Planck's law modied by the emissivity value).…”

Section: Introductionmentioning

confidence: 99%

A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

et al. 2019

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Section: Introductionmentioning

confidence: 99%

A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

et al. 2019

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“…The integration of the multiple functionalities of sensing, learning, computing, and memory into a single chip has become an inevitable trend, not only for silicon‐based electronics but also for a new generation of wearable electronics . Transformative nanoelectronics, which uses emerging nanotechnologies to simultaneously sense, process, and memorize intricate information, has presented superiorities in future multifunctional systems . Despite numerous prospects of reported transformative nanodevices, two major issues are yet to be addressed.…”

mentioning

confidence: 99%

A Flexible Carbon Nanotube Sen‐Memory Device

Sun

Chen

et al. 2020

Advanced Materials

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In a modern electronics system, charge‐coupled devices and data storage devices are the two most indispensable components. Although there has been rapid and independent progress in their development during the last three decades, a cofunctionality of both sensing and memory at single‐unit level is yet premature for flexible electronics. For wearable electronics that work in ultralow power conditions and involve strains, conventional sensing‐and‐memory systems suffer from low sensitivity and are not able to directly transform sensed information into sufficient memory. Here, a new transformative device is demonstrated, which is called “sen‐memory”, that exhibits the dual functionality of sensing and memory in a monolithic integrated circuit. The active channel of the device is formed by a carbon nanotube thin film and the floating gate is formed by a controllably oxidized aluminum nanoparticle array for electrical‐ and optical‐programming. The device exhibits a high on–off current ratio of ≈106, a long‐term retention of ≈108 s, and durable flexibility at a bending strain of 0.4%. It is shown that the device senses a photogenerated pattern in seconds at zero bias and memorizes an image for a couple of years.

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“…Reproduced under the terms of the CC-BY Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/). [182] Copyright 2017, The Authors, published by Springer Nature. quantum computing.…”

Section: Swcnt Single-photon Emittersmentioning

confidence: 99%

“…While the vertical communication design can theoretically achieve high communication speeds on the order of 10 n 2 Gbps for an n × n emitter/detector array, compatibility with other photonic elements (e.g., waveguides) was not addressed. [182] SWCNT-based plasmonic interconnected circuits have also been achieved using electrically driven surface plasmonpolariton sources and Au-strip plasmonic waveguides. [183] Additional advances in this plasmonic interconnected circuit design enable 3D integration of plasmonic interconnects and electronic devices.…”

Section: Chirality-enriched Swcnt Optoelectronic Integrated Circuitsmentioning

confidence: 99%

Chirality‐Enriched Carbon Nanotubes for Next‐Generation Computing

Rojas

Hersam

2020

Advanced Materials

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electronic, [3-4,4] and functional requirements. [5] Conventional silicon integrated circuit (IC) technology faces significant challenges in meeting these demands due to its limited mechanical flexibility, high temperature processing, and scaling limitations. Emerging alternative computing platforms based on other crystalline semiconductors suffer from similar limitations. Consequently, nextgeneration computing necessitates the exploration of radically different electronic materials. Single-walled carbon nanotubes (SWCNTs) are among the most promising and highly studied nanoelectronic materials. Due to their small size, [6,7] solutionprocessability, [8] chemical stability, [9] and chirality-dependent optoelectronic properties, [10] SWCNTs offer a number of unique advantages and are compatible with the complex requirements of future computing devices. Recent advances in chiral enrichment of polydisperse SWCNTs [8,10] have allowed their use as semiconducting channels in diverse settings including charge transport devices, [2] optical emitters and detectors, [11,12] and chemical sensors. [2,3,13,14] With this tunable functionality, a range of SWCNT-based computing applications have been realized, such as printed digital logic, [15] sub-10 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs), [16] neuromorphic devices, [17] single-photon emitters (SPE), [18] and enantiomer-recognition sensors. [14] Herein, we discuss recent advances in SWCNT-based computing technologies that process, manage, and communicate information, with an emphasis on the enabling role of chiral enrichment. Section 2.1 defines the different levels of chiral enrichment. Sections 2.2 and 2.3 describe direct growth methods and post-processing purification of SWCNTs for electronic-type and monochiral enrichment. Section 3 discusses applications of electronic-type-enriched SWCNTs such as wearables, highly scaled FETs, 3D logic-memory integration, and neuromorphic devices. Section 4 outlines applications of monochiral-enriched SWCNTs including monochiral FETs, optical emitters, photodetectors, and optoelectronic ICs. Section 5 considers recent progress toward enantiomerically pure SWCNTs. Finally, Section 6 presents an outlook for SWCNTs in next-generation computing applications including a delineation of remaining challenges and future opportunities. For the past half century, silicon has served as the primary material platform for integrated circuit technology. However, the recent proliferation of nontraditional electronics, such as wearables, embedded systems, and lowpower portable devices, has led to increasingly complex mechanical and electrical performance requirements. Among emerging electronic materials, single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation computing as a result of their superlative electrical, optical, and mechanical properties. Moreover, their chirality-dependent properties enable a wide range of emerging electronic applications including sub-10 nm complementary fie...

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Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

Cited by 69 publications

References 38 publications

A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

A Flexible Carbon Nanotube Sen‐Memory Device

Chirality‐Enriched Carbon Nanotubes for Next‐Generation Computing

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