Carbon Nanotube Composites for Electronic Interconnect Applications

Chowdhury, Tamjid; Rohan, James F.

doi:10.5772/52731

Cited by 5 publications

(2 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[56,61,62,68,105]. The interconnects industry has already evolved methods, such as using organic additives, altering electrodeposition parameter, and post-fabrication processing for Cu grain control, which can be borrowed and tested for Cu/CNT preparation [122–125].…”

Section: Cu/cnt Research: Goals Challenges and Futurementioning

confidence: 99%

“…( a ) Cu/CNT for mainstream electronics: For the electronics industry, electrodeposition-based Cu/CNT fabrication methods are most compatible. Co-electrodeposition is closest to the current processing technologies used by the electronics industry (damascene process [122–125]). However, co-electrodeposition entails several Cu/CNT structure control issues that need solving, such as obtaining individually dispersed long CNTs for homogeneous composite fabrication, controlling nanotube alignment, etc.…”

Section: Cu/cnt Research: Goals Challenges and Futurementioning

confidence: 99%

See 1 more Smart Citation

Copper/carbon nanotube composites: research trends and outlook

et al. 2018

View full text Add to dashboard Cite

We present research progress made in developing copper/carbon nanotube composites (Cu/CNT) to fulfil a growing demand for lighter copper substitutes with superior electrical, thermal and mechanical performances. Lighter alternatives to heavy copper electrical and data wiring are needed in automobiles and aircrafts to enhance fuel efficiencies. In electronics, better interconnects and thermal management components than copper with higher current- and heat-stabilities are required to enable device miniaturization with increased functionality. Our literature survey encouragingly indicates that Cu/CNT performances (electrical, thermal and mechanical) reported so far rival that of Cu, proving the material's viability as a Cu alternative. We identify two grand challenges to be solved for Cu/CNT to replace copper in real-life applications. The first grand challenge is to fabricate Cu/CNT with overall performances exceeding that of copper. To address this challenge, we propose research directions to fabricate Cu/CNT closer to ideal composites theoretically predicted to surpass Cu performances (i.e. those containing uniformly distributed Cu and individually aligned CNTs with beneficial CNT–Cu interactions). The second grand challenge is to industrialize and transfer Cu/CNT from lab bench to real-life use. Toward this, we identify and propose strategies to address market-dependent issues for niche/mainstream applications. The current best Cu/CNT performances already qualify for application in niche electronic device markets as high-end interconnects. However, mainstream Cu/CNT application as copper replacements in conventional electronics and in electrical/data wires are long-term goals, needing inexpensive mass-production by methods aligned with existing industrial practices. Mainstream electronics require cheap CNT template-making and electrodeposition procedures, while data/electrical cables require manufacture protocols based on co-electrodeposition or melt-processing. We note (with examples) that initiatives devoted to Cu/CNT manufacturing for both types of mainstream applications are underway. With sustained research on Cu/CNT and accelerating its real-life application, we expect the successful evolution of highly functional, efficient, and sustainable next-generation electrical and electronics systems.

show abstract

Section: Cu/cnt Research: Goals Challenges and Futurementioning

confidence: 99%

Section: Cu/cnt Research: Goals Challenges and Futurementioning

confidence: 99%

Copper/carbon nanotube composites: research trends and outlook

et al. 2018

View full text Add to dashboard Cite

show abstract

Nanopackaging: Nanotechnologies and Electronics Packaging

Morris

2018

Nanopackaging

View full text Add to dashboard Cite

of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

show abstract

Development of seed layer for electrodeposition of copper on carbon nanotube bundles

Jordan¹,

Feng²,

Burkett³

2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

The reliability of metal filled through silicon vias (TSVs) will determine their suitability in the semiconductor industry. The adoption of this technology will depend strongly on the materials used for filling vias that function as vertical interconnects. Conventional materials for filling TSVs include copper and tungsten. Carbon nanotubes (CNTs) are an excellent candidate to replace or be used in conjunction with these materials due to their superior electrical and mechanical properties. Metallic CNT bundles can allow nearly unhampered transport of electrons, resulting in a low resistance interconnect capable of withstanding high current densities. The growth of CNTs with ethylene and methane precursors by thermal chemical vapor deposition has been investigated using thin films of aluminum oxide and iron as catalysts. Nickel and cobalt were investigated as well with limited success. CNT growth is followed by electrochemical deposition (ECD) of copper. Traditionally, sputtered or evaporated Cu is used as a seed layer for ECD; however, the high temperatures necessary for CNT growth made Cu an unsuitable seed layer due to migration. The authors investigated combinations of ECD seed layers and CNT catalysts on the surface of a silicon wafer to qualify the best materials for the formation of a Cu/CNT matrix. ECD of Cu was studied on as-grown and densified CNTs with a tungsten seed layer. Once the process for covering CNT bundles with copper is optimized, future work will focus on placing the materials system inside cylindrical vias formed using an inductively coupled plasma etch process.

show abstract

Carbon Nanotube Composites for Electronic Interconnect Applications

Cited by 5 publications

References 3 publications

Copper/carbon nanotube composites: research trends and outlook

Copper/carbon nanotube composites: research trends and outlook

Nanopackaging: Nanotechnologies and Electronics Packaging

Development of seed layer for electrodeposition of copper on carbon nanotube bundles

Contact Info

Product

Resources

About