Carbon nanotube field-effect transistor operation at microwave frequencies

Pesetski, Aaron A.; Baumgardner, James E.; Folk, Erica C.; Przybysz, J.X.; Adam, J.D.; Zhang, Hong

doi:10.1063/1.2185007

Cited by 63 publications

(55 citation statements)

References 23 publications

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“…(The necessary mathematical basis is developed in some detail below.) The first mixing measurement of individual nanotube transistors reached a carrier frequency of 500 MHz11 and shortly afterwards several tens of GHz was detected 12, 13. This technique is also presently the only one applied to detect electrically the mechanical resonances of doubly clamped CNT NEMS 14–18…”

Section: Introductionmentioning

confidence: 99%

Digital and FM Demodulation of a Doubly Clamped Single‐Walled Carbon‐Nanotube Oscillator: Towards a Nanotube Cell Phone

Gouttenoire¹,

Barois²,

Perisanu³

et al. 2010

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Electromechanical resonators are a key element in radio-frequency telecommunication devices and thus new resonator concepts from nanotechnology can readily find important industrial opportunities. Here, the successful experimental realization of AM, FM, and digital demodulation with suspended single-walled carbon-nanotube resonators in a field-effect transistor configuration is reported. The crucial role played by the electromechanical resonance in demodulation is clearly demonstrated. The FM technique is shown to lead to the suppression of unwanted background signals and the reduction of noise for a better detection of the mechanical motion of nanotubes. The digital data-transfer rate of standard cell-phone technology is within the reach of these devices.

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Section: Introductionmentioning

confidence: 99%

Digital and FM Demodulation of a Doubly Clamped Single‐Walled Carbon‐Nanotube Oscillator: Towards a Nanotube Cell Phone

Gouttenoire¹,

Barois²,

Perisanu³

et al. 2010

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152

166

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“…Experimentally, a state-of-the-art cut-off frequency of 30 GHz has been reached in a low impedance multi-nanotube device [3], whereas 8 GHz was achieved with a multigate single nanotube transistor [4]. Indirect evidence of microwave operation were also obtained in experiments based on mixing effects or channel conductance measurement in single nanotubes [5,6,7,8,9].The extraordinary performances of nanotubes as molecular field effect transistors rely on a series of unique properties. High-mobility "p-doped" single walled nanotubes can be obtained by CVD-growth, with a semiconducting gap ∆ ∼ 0.5-1 eV (diameter 1-2 nm) [10].…”

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confidence: 99%

Single Carbon Nanotube Transistor at GHz Frequency

et al. 2008

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We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHz range we deduce device transconductance gm and gatenanotube capacitance Cg of micro-and nanometric devices. A large and frequency-independent gm ∼ 20 µS is observed on short devices which meets best dc results. The capacitance per unit gate length ∼ 60 aF/µm is typical of top gates on conventional oxide with ǫ ∼ 10. This value is a factor 3-5 below the nanotube quantum capacitance which, according to recent simulations, favors high transit frequencies fT = gm/2πCg. For our smallest devices, we find a large fT ∼ 50 GHz with no evidence of saturation in length dependence. PACS numbers:Carbon nanotube field effect transistors (CNT-FETs) are very attractive as ultimate, quantum limited devices. In particular, ballistic transistors have been predicted to operate in the the sub-THz range [1,2]. Experimentally, a state-of-the-art cut-off frequency of 30 GHz has been reached in a low impedance multi-nanotube device [3], whereas 8 GHz was achieved with a multigate single nanotube transistor [4]. Indirect evidence of microwave operation were also obtained in experiments based on mixing effects or channel conductance measurement in single nanotubes [5,6,7,8,9].The extraordinary performances of nanotubes as molecular field effect transistors rely on a series of unique properties. High-mobility "p-doped" single walled nanotubes can be obtained by CVD-growth, with a semiconducting gap ∆ ∼ 0.5-1 eV (diameter 1-2 nm) [10]. Low Schottky-barrier contacts, with Pd metallisation, and quasi-ballistic transport result in a channel resistance R ds approaching the quantum limit, h/4e 2 = 6.5 kΩ for a 4-mode single walled nanotube [11]. High saturation currents, limited by optical phonon emission, allow large biases, I ds ∼ 20 µA at V ds 1 V in short nanotubes [12,13]. The above numbers and the good gate coupling explain the large transconductances, g m ∼ I ds /∆ 10 µS, observed in dc experiments [1]. In the ac, an intrinsic limitation is given by the transit frequency f T = g m /2πC g , where C g is the gate-nanotube capacitance. Here C g = C geo C Q /(C geo + C Q ) is the series combination of the quantum and geometrical capacitances, C Q and C geo . Ultrathin oxide coating in CNTFETs allows to approach the quantum limit with a capacitance per unit gate length l g , C geo /l g > C Q /l g = * Electronic address: Bernard.Placais@lpa.ens.fr

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“…Due to the small diameter of carbon nanotubes, the junction capacitance can be significantly smaller than for normal Schottky detectors, which could push the detection frequency cutoff to beyond 30 THz. 6,7 Besides bolometric detectors, other microwave applications of CNTs such as mixers, 8 microwave field-effect transistors, 9 and direct and heterodyne detectors 10 have been realized. The NEP obtained in our work is better than what has been achieved with other direct detector device at an operating temperature of 4.2 K ͑see Ref.…”

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confidence: 99%

Carbon nanotube bolometers

Tarasov

Svensson

Kuzmin

et al. 2007

Applied Physics Letters

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A cryogenic bolometer has been fabricated using a bundle of single-walled carbon nanotubes as absorber. A bolometric response was observed when the device was exposed to radiation at 110GHz. The temperature response was 0.4mV∕K, with an intrinsic electrical responsivity at low frequency up to 109V∕W and noise equivalent power of 3×10−16W∕Hz1∕2 at 4.2K. The response is largest at input power levels of a few femtowatts and decreases inversely proportional to the input power. Low frequency noise shows a 1∕f dependence.

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Carbon nanotube field-effect transistor operation at microwave frequencies

Cited by 63 publications

References 23 publications

Digital and FM Demodulation of a Doubly Clamped Single‐Walled Carbon‐Nanotube Oscillator: Towards a Nanotube Cell Phone

Digital and FM Demodulation of a Doubly Clamped Single‐Walled Carbon‐Nanotube Oscillator: Towards a Nanotube Cell Phone

Single Carbon Nanotube Transistor at GHz Frequency

Carbon nanotube bolometers

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