Carbon Nanotube Quantum Dots As Highly Sensitive Terahertz-Cooled Spectrometers.

Rinzan, Mohamed; Jenkins, Glenn L.; Drew, H. D.; Shafranjuk, Serhii; Barbara, Paola

doi:10.1021/nl300975h

Cited by 48 publications

(59 citation statements)

References 13 publications

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“…Photonassisted tunneling in the Coulomb blockade regime was reported in Ref. 11. The response of antenna-coupled fully suspended single carbon nanotubes to sub-THz radiation was reported in Ref.…”

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confidence: 99%

Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation

Fedorov

Кардакова

Gayduchenko

et al. 2013

Applied Physics Letters

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We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. The unique band structure of carbon nanotubes (CNT) makes them good candidates for optoelectronic applications in a wide frequency range. [1][2][3] Due to the quantization of the electron wave vector around the circumference a CNT with n -m 6 ¼ 3i, where i is an integer is a semiconductor with an energy gap e g $ 1/r (with r the radius of the CNT). 4 The optical properties of semiconducting nanotubes, in the visible and near infrared range, have been intensely studied during the last ten years. 1,5,6 It has been shown that they can be used as basic elements for different optoelectronic functions, such as photodetectors 6 or light emitting diodes. 7 Nanotubes, with n -m ¼ 3i, with n 6 ¼ m, are called quasi-metallic, due to their small band gap, which ranges from about 1 to about 30 meV for nanotubes with a diameter of 1-2 nm. 8,9 Socalled armchair CNTs, with n ¼ m, are truly metallic. Quasi-metallic CNTs are potentially very good candidates for optoelectronics in the THz range because their bandgaps fall into the corresponding energy range.Previous research on THz detectors based on CNTs has brought interesting new results. 3,10 Diode type detection and bolometric detection were reported in Refs. 3 and 10. Photonassisted tunneling in the Coulomb blockade regime was reported in Ref. 11. The response of antenna-coupled fully suspended single carbon nanotubes to sub-THz radiation was reported in Ref.12. A power-dependent DC voltage was reported in this work and interpreted as a combined effect of the increased temperature of the electron liquid with respect to the electrodes and requiring an asymmetry in the contact resistances.Here we report on CNT devices, which will have a temperature gradient due to a difference in heat transfer along the CNTs while exposed to radiation. The different heat transfer conditions occur because of a difference in coupling to the substrate along the length. The devices show a DC voltage signal in response to radiation in the sub-THz range in the temperature range from 4.2 to 300 K. We argue that the room temperature response is thermal in origin, similarly to the photoresponse of CNT films reported before, e.g., in Ref. 13. The data obtained at low temperatures indicate contributions of both thermal effects and of photovoltaic effects. While it is not clear if the observed effect can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that ...

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confidence: 99%

Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation

Fedorov

Кардакова

Gayduchenko

et al. 2013

Applied Physics Letters

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“…There have been several related studies on optimization of antenna designs [4,5] and exploration of antenna materials [6,7]. Among various antennas, planar antennas [8] such as the bow-tie antenna, the logarithm periodic antenna and the logarithmspiral (log-spiral) antenna are widely used to couple optical fields with detectors in a broad frequency band [9][10][11]. Though these previous studies provided important information on IR antennas, the nanoscale local properties of electric field and phase for bow-tie probe combined with spiral structures have not been fully investigated and understood, especially in terms of incident IR polarization dependence.…”

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confidence: 99%

Near-field infrared investigations of an arm-terminated spiral structure with bow-tie probe

et al. 2018

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A detailed analysis of micro-and nanoantennas is crucial for enhancing the performance of photodetectors in the mid-and far-infrared (IR) region. In contrast to the rapid progress in IR detectors based on nanodevices, the local nanoscale properties of antennas for the purpose of near-field coupling with these detectors have not been well investigated. In this work, we fabricated and studied a logarithm-spiral (logspiral) antenna with an arm termination, which was designed as a low-loss, wide-band antenna for highly efficient near-field interaction with nanoscale IR detectors. By using a scattering-type near-field optical microscope (s-SNOM) combined with a highly stable quantum cascade laser, we observed a nanoscale spatial distribution of amplitudes generated via IR illumination on the antenna surface. Experimental and simulated results revealed a clear dependence on IR-light polarization corresponding to the rotationally symmetric structure of the spiral antenna. Furthermore, phase mapping measurements indicated a π reversal of the out-of-plane phase between two adjacent antenna probes regardless of polarization direction, providing a possibility of efficient near-field coupling with nanoscale detectors. These results demonstrate that s-SNOM imaging offers a powerful tool for gaining useful information regarding mutual coupling between optical antennas and nanostructures.

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“…In a 14 nm-long channel device, we measured low-temperature charging energies for holes and electrons exceeding 100 and 50 meV, respectively, which suggests that the e – h asymmetry could survive in room temperature devices. Nanotube transistors with a giant e − h transport asymmetry could find applications in exploring the physics of near molecular size SWCNT-NEMS46, to shrink down SWCNT qubits1247 and to create SWCNT THz detectors15 or gate programmable transistors16.…”

Section: Discussionmentioning

confidence: 99%

“…Downsizing ultra-clean e − h asymmetric SWCNT transistors to 10 nm would create QDs, which can be toggled between two vastly different charging energies. They would be useful to explore fundamental nano-electro-mechanical system (NEMS) physics56789 and qubits2101112 at energy scales close the ones in single molecules1314 or to create THz bolometers15, which are sensitive to two different wavelength ranges (one for each E C ). In addition, a large e − h transport asymmetry in SWCNT transistors could allow them to act as both active logic elements (QDs) for hole doping and interconnects (quantum bus) for electron doping.…”

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confidence: 99%

Giant electron-hole transport asymmetry in ultra-short quantum transistors

et al. 2017

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Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

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Carbon Nanotube Quantum Dots As Highly Sensitive Terahertz-Cooled Spectrometers.

Cited by 48 publications

References 13 publications

Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation

Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation

Near-field infrared investigations of an arm-terminated spiral structure with bow-tie probe

Giant electron-hole transport asymmetry in ultra-short quantum transistors

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