Carbon nanotube single-electron transistors with single-electron charge storages

Seike, Kohei; Kanai, Yasushi; Ohno, Yasuhide; Maehashi, Kenzo; Inoue, Kōichi; Matsumoto, Kazuhiko

doi:10.7567/jjap.54.06ff05

Cited by 6 publications

(4 citation statements)

References 44 publications

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“…The most used SET implementation methods are shadow evaporation [26][27][28][29], scanning probe microscope tip modification [30,31], electromigration [32][33][34], nanoscale oxidation [35,36] and mechanically controlled break junction formation [37,38]. By the advance of nanofabrication processes and technology the use of nanoscale objects like nanoparticles [39][40][41][42][43][44], nanotubes [45][46][47], fullerenes [48,49] and single-molecules [20,50] as nano-islands for SET devices has been demonstrated. However, controlling the size and position of the nano-island as part of an SET device can be very challenging if self-assembly process steps are involved.…”

Section: Introductionmentioning

confidence: 99%

Direct-write single electron transistors by focused electron beam induced deposition

et al. 2019

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Single-electron transistor (SET) device fabrication for operation in the tens of Kelvin range is still challenging due to the need of controlled definition of the metallic island with a diameter far below 100 nm and proper tuning of the island’s tunnel couplings to the drain and source leads. Here we present results on SET device fabrication using focused electron beam induced deposition (FEBID) for island definition between pre-fabricated SET electrode structures. The island’s nano-granular microstructure allows us, in conjunction with in situ tuning of the inter-grain tunnel coupling by post-growth electron irradiation, to study the effect of the island’s electronic granularity on SET device performance. In addition we show that for reliable SET operation FEBID-associated co-deposit in proximity of the island has to be removed which can be accomplished by a novel in situ Ar ion etching process. For the low-temperature properties of functioning SET devices we obtain good agreement of capacitance values deduced from the current–voltage characteristics and capacitance calculations based on the geometry of the device electrodes and the microstructure of the island. Complementary simulations of the SET current–voltage characteristics based on the master equation approach are in good agreement with the experimental data. The observation of well-defined Coulomb oscillations indicates that FEBID-based SET structures can be useful as on-demand charge monitor devices with high lateral positioning flexibility.

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Section: Introductionmentioning

confidence: 99%

Direct-write single electron transistors by focused electron beam induced deposition

et al. 2019

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“…However, the quantum efficiencies of these systems are far from unity because of the large size or low electric conductivity of the electrodes. Furthermore, single-electron counting systems based on these materials require ultrahigh vacuum or low-temperature environments to reduce the noise, , which is unfavorable for practical applications. Graphene FETs exhibit high molecular-sensing performance − owing to the high carrier mobility and carrier density of graphene .…”

Section: Introductionmentioning

confidence: 99%

Photosensing System Using Photosystem I and Gold Nanoparticle on Graphene Field-Effect Transistor

Nishiori

Zhu

Salles

et al. 2019

ACS Appl. Mater. Interfaces

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In this study, a light sensor is fabricated based on photosystem I (PSI) and a graphene field-effect transistor (FET) that detects light at a high quantum yield under ambient conditions. We immobilized PSI on a micrometer-sized graphene FET using Au nanoparticles (AuNPs) and measured the I–V characteristics of the modified graphene FET before and after light irradiation. The source–drain current (I sd) increased upon illumination, exhibiting a photoresponsivity of 4.8 × 102 A W–1, and the charge neutrality point of graphene shifted by −12 mV. This system represents the first successful photosensing system based on proteins and a solution-gated graphene FET. The probable mechanism of this negative shift can be explained by the increase in negative charge carriers in graphene induced by a hole trap in the AuNP resulting from electron transfer from the AuNP to PSI. Photoresponses were only observed in the presence of two surface-active agents, n-hexyltrimethylammonium bromide and sodium dodecylbenzenesulfonate, because they caused the formation of a hydrophobic environment on the surface of the graphene. The lipid layer of these agents caused dissociation of ascorbate ions from the graphene sheet, thereby expanding the Debye screening length of the electrolyte solution. The hydrophobic environment above graphene also enhanced hole storage in the AuNP through electron transfer from the AuNP to PSI.

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“…Organic nanotubes such as Carbon nanotubes, which were discovered by Iijima, show astonishing electrical properties and these properties depend upon the diameter and chirality [17,18], while the inorganic nanotubes similarly include boron-nitride, Si, gold etc. [19,20,21]. Pure boron nanotubes were discovered later, and it has been predicted that all boron nanotubes are found to be metallic in nature [22][23][24][25][26][27].…”

Section: Eejp 1 (2020)mentioning

confidence: 99%

First Principles Calculations of Carbon-Nanotube and Boron-Nanotube Based Single Electron Transistors

Chauhan

Verma

2020

EEJP

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Low power consumption, small device size and better controlled onto the charge carriers are the factors, that made Single-electron transistor (SET) a suitable candidate for molecular electronics; yet there are some improvements that can be done in order to use it practically. The single electron transistor (SET) operates through the tunnelling of electron via two tunnel junctions. Choosing a suitable island material plays a key role in the tunnelling of electron through the tunnel junctions. In the present work, the First principle calculations of carbon-nanotube and boron-nanotube based Single-Electron Transistors have been performed. The three types of configurations of nanotubes i.e. zigzag (5,0), armchair (3,3) and chiral (4,2), of the smallest possible diameter (approximately 4A ),have been used. The calculations have been carried out using Atomistic toolkit (ATK-VNL) simulation package which is a density functional theory (DFT) based package. In the present work, local density approximations (LDA) as well as generalized gradient approximation(GGA) have been used to demonstrate the properties of nanotubes-based SET. These approaches have been implemented for a nanotube that is lying just above the gate dielectric. On the either side of the dielectric the electrodes are present, source in the left and drain in the right. The metallic electrodes made of gold (W=5.28eV) and the dielectric material of the dielectric constant have been used. The charging energies and additional energies of both types of nanotubes-based SET in the isolated as well as in the electrostatic environment have been calculated using the approximations. The calculated values of the charging energies in the electrostatic environment have been found to be less than the charging energies in isolated configuration that shows the renormalization of molecular energy levels. Variations of total energies against gate voltages and Charge stability diagrams (CSD) have been discussed.

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Carbon nanotube single-electron transistors with single-electron charge storages

Cited by 6 publications

References 44 publications

Direct-write single electron transistors by focused electron beam induced deposition

Direct-write single electron transistors by focused electron beam induced deposition

Photosensing System Using Photosystem I and Gold Nanoparticle on Graphene Field-Effect Transistor

First Principles Calculations of Carbon-Nanotube and Boron-Nanotube Based Single Electron Transistors

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