Carbon nanotube thin film transistors based on aerosol methods

Zavodchikova, M. Y.; Kulmala, Tero S.; Nasibulin, Albert G.; Ermolov, Vladimir; Franssila, Sami; Grigoras, Kestutis; Kauppinen, Esko I.

doi:10.1088/0957-4484/20/8/085201

Cited by 50 publications

(46 citation statements)

References 43 publications

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“…[86] Accordingly, CNTs with Y-junctions (which have a large junction area) have a much better electrical performance than do X-junctions (which have a small junction area and therefore a high contact resistance), showing an increase of carrier mobility from 4 to 35 cm 2 V −1 s −1 . [137,174] It was also found that the effective length of CNTs in the current flow direction of TFTs is short for X-junction dominated networks, and thus, the number of junctions in the current path and resistance of the network are increased.…”

Section: Factors Affecting Tft Performancementioning

confidence: 98%

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

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silicon wafer, TFTs can be fabricated on various types of rigid or flexible substrates. [1] TFTs fabricated on glass are primarily used for driving circuits in the liquid-crystal displays of televisions, computer monitors, and mobile phones, etc. Well-established TFT technologies based on amorphous silicon and polycrystalline silicon are well-suited for large-area, highresolution panels, e.g., six pieces of 65-and 75-inch TFT arrays can be fabricated on a 10.5th generation glass substrate. [2] However, TFTs based on these silicon-based semiconductors still face challenges in flexible and transparent applications, which would allow circuit integration on curved and non-rigid surfaces and in multi-layer packaging, e.g., head-up displays on windshields, informational displays on eyeglasses and transparent electronic skin in wearable electronics. [3] In terms of the materials used to construct flexible and transparent devices, not only the transistor channel but also the dielectric layers and metallic interconnects should have excellent flexibility and transparency. [4] The following factors play critical roles in the selection of channel materials: carrier mobility, temperature of material preparation, flexibility, large area availability, cost and stability. Carrier mobility is an important parameter to characterize the drift velocity of electrons or holes in a semiconductor under an applied electric field. [5] A high mobility corresponds to a high operating speed of the TFTs and their circuits. The only advantage of low-temperature polycrystalline silicon is its relatively high mobility. [6] Amorphous oxide semiconductors, including indium gallium zinc oxide, have a modest mobility and are costly due to the use of noble metal elements. [7] Hydrogenterminated amorphous silicon has modest properties in carrier mobility, large-area and flexibility, [1] and organic semiconductors are better suited for flexible and transparent TFTs except for their shortcomings of low mobility and poor environmental stability. [8] On the other hand, normal metal electrodes, such as gold, silver, aluminum and copper, cannot be used to form transparent electrodes due to their poor light transmittance. Both transparent indium tin oxide (ITO) electrodes and opaque metal electrodes suffer from flexibility constraints and can usually tolerate strains of less than 2%. [9][10][11] Therefore, the discovery of new types of robust channel and electrode materials is essential to achieve transparent, flexible, and even stretchable electronics. [12] Carbon nanomaterials, such as carbon nanotubes (CNTs) and graphene, have attracted great attention for potential use in flexible and transparent electronics since their discovery in the last two decades, [13,14] owing to their excellent properties Carbon nanotubes and graphene have attracted great attention for potential applications in flexible and transparent electronics, owing to their exceptional properties including very high electrical conductivity, optical transmittance, mechanical strength and f...

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Section: Factors Affecting Tft Performancementioning

confidence: 98%

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

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“…While there have been many reports of synthesis of CNTs using AACVD, surprisingly there are only few reports of their application in real devices. [22,23] Here, we grew CNTs on to steel substrates and studied their performance in supercapacitors, which exhibited a high geometric capacitance of 3.4 mF cm À2 . Steel is the substrate of choice for two main reasons.…”

Section: Introductionmentioning

confidence: 99%

Aerosol‐Assisted Chemical Vapor Deposition of Multi‐Walled Carbon Nanotubes on Steel Substrates for Application in Supercapacitors

Sagu

Wijayantha

Bohm³

et al. 2015

Adv Eng Mater

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Carbon nanotubes (CNTs) are grown on to steel substrates by aerosol-assisted chemical vapor deposition using ferrocene in ethanol as the carbon feedstock. The CNTs adopted a highly entangled morphology. Elemental analysis indicates that the main source of carbon for CNT growth is from the cyclopentadiene rings in ferrocene rather than the ethanol solvent. The CNT-coated steel substrates are evaluated for their performance as supercapacitor electrodes. The electrodes exhibit a high geometric capacitance of 3.4 mF cm À2 which is due to the high internal surface area, but a relatively low specific capacitance of 0.34 F g À1 .

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“…In these structures, CNTs act as transparent electrodes replacing In 2 O 3 :Sn (ITO) or semitransparent metal layers, and promoting an increase of the collection area for current carriers photogenerated in semiconductor. At the same time, the optical and conduction properties of the network layers made of SWCNTs were shown to depend both on technology of CNT layer formation and deposition on the substrate as well as on the structure and adhesion properties of substrate [1, 2,[5][6][7][8]. So, the elaborated by us method of SWCNT nanolayer deposition on the Si surface modified with poly(vinylpyridine) (PVP) for Au/n-Si photovoltaic structures [5] should be verified in the case of other structures.…”

Section: Introductionmentioning

confidence: 99%

Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface

Dmitruk¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The effect of single-wall carbon nanotubes nanolayer on photoelectric properties of Au/n-GaAs photovoltaic structure with a microrelief interface has been investigated. Microrelief interfaces of dendrite-like and quasi-grating type aimed at enhancement of photocurrent have been prepared by the wet chemical anisotropic etching of GaAs. Carbon nanotubes obtained using the arc-discharge method were deposited on GaAs surface modified with poly(vinylpyridine) by dip-coating repeated several times. Optical, photoelectric and electrical properties of Au/GaAs structures have been studied in dependence on the averaged thickness of nanotubes nanolayer. Considerable photocurrent enhancement has been determined for structures with both the flat and textured interface but with a different optimal thickness of nanotubes layer. The effect was concluded to be caused by increasing the lateral photocurrent component due to enlargement of the current collection area and increase of the light trapping.

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Carbon nanotube thin film transistors based on aerosol methods

Cited by 50 publications

References 43 publications

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Aerosol‐Assisted Chemical Vapor Deposition of Multi‐Walled Carbon Nanotubes on Steel Substrates for Application in Supercapacitors

Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface

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