Carbon nanotube vertical interconnects fabricated at temperatures as low as 350°C

Vollebregt, Sten; Tichelaar, F.D.; Schellevis, H.; Beenakker, C.I.M.; Ishihara, Ryoichi

doi:10.1016/j.carbon.2014.01.035

Cited by 52 publications

(49 citation statements)

References 29 publications

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“…By counting, the density of the CNT bundle was estimated to be around 5x10 10 tubes/cm 2 . Using transmission electron microscopy the average diameter of the tubes was found to be 8 nm, as was shown elsewhere 16 . Due to the low growth temperatures the CNT walls contain many defects making determining the number of walls difficult.…”

supporting

confidence: 74%

“…With increasing quality of the CNT, first the I D/G ratio increases, till a certain amount of crystallization is reached after which the ratio decreases monotonically. Due to the very low growth temperature, the CNT in this work appear to have a crystallinity below this threshold 16 . In these cases the full-width at half maximum of the D band can be used to compare CNT samples fabricated at different process conditions 18 .…”

mentioning

confidence: 89%

“…2. Perform 4-point probe I-V measurements using a probe station in combination with a semiconductor parameter analyzer as described in Figure 1 and in Vollebregt et al 16 . Note: Normally a voltage sweep from -0.5 to 0.5 V is sufficient, as the potential drop over an interconnect ideally is small.…”

Section: Measurementsmentioning

confidence: 99%

“…Here we present a scalable method for growing CNT at temperatures as low as 350 °C using Co as catalyst 16 . This method is of interest for fabricating different electrical structures consisting of vertically aligned CNT in integrated circuits, ranging from interconnect and electrodes to super capacitors and field emission devices.…”

mentioning

confidence: 99%

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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Vollebregt

Ishihara

2015

JoVE

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We demonstrate a method for the low temperature growth (350 °C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-κ dielectrics and some flexible substrates. The process is compatible with standard semiconductor fabrication, and a method for the fabrication of electrical 4-point probe test structures for vertical interconnect test structures is presented. Using scanning electron microscopy the morphology of the CNT bundles is investigated, which demonstrates vertical alignment of the CNT and can be used to tune the CNT growth time. With Raman spectroscopy the crystallinity of the CNT is investigated. It was found that the CNT have many defects, due to the low growth temperature. The electrical current-voltage measurements of the test vertical interconnects displays a linear response, indicating good ohmic contact was achieved between the CNT bundle and the top and bottom metal electrodes. The obtained resistivities of the CNT bundle are among the average values in the literature, while a record-low CNT growth temperature was used. Video LinkThe video component of this article can be found at

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supporting

confidence: 74%

mentioning

confidence: 89%

Section: Measurementsmentioning

confidence: 99%

mentioning

confidence: 99%

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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Vollebregt

Ishihara

2015

JoVE

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“…[1][2][3][4][5] The exceptional properties of CNTs and related materials have triggered tremendous efforts not only to study their intrinsic properties but also to explore their applications in a large variety of fi elds. [6][7][8][9][10][11][12][13] These high-aspect-ratio 3D structures play an important role in the advancement of vertical interconnect technology, [14][15][16][17] fl exible batteries, [ 3 ] stamps for micro/nanoimprint lithography, [ 2,[18][19][20][21] compliant thermal interface materials for low inter-facial resistances, [22][23][24][25] 3D super-capacitors [ 26,27 ] and nano/micro-electromechanical systems (NEMS) and (MEMS). [ 1,[28][29][30] The CNT arrays that we refer to in this work are composed of nominally vertical, interwoven, multi-wall carbon nanotubes.…”

Section: Introductionmentioning

confidence: 99%

Tailoring the Mechanical Properties of High‐Aspect‐Ratio Carbon Nanotube Arrays using Amorphous Silicon Carbide Coatings

Poelma

Morana

Vollebregt

et al. 2014

Adv Funct Materials

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The porous nature of carbon nanotube (CNT) arrays allows for the unique opportunity to tailor their mechanical response by the infiltration and deposition of nano-scale conformal coatings. Here, we fabricate novel photo-lithographically defined CNT pillars that are conformally coated with amorphous silicon carbide (a-SiC) to strengthen the interlocking of individual CNTs at junctions using low pressure chemical vapour deposition (LPCVD). We further quantify the mechanical response by performing flat-punch nanoindentation measurements on coated CNT pillars with various high-aspect-ratios. We discovered new mechanical failure modes of coated CNT pillars, such as "bamboo" and brittle-like composite rupture as coating thickness increases. Furthermore, a significant increase in strength and modulus is achieved. For CNT pillars with high aspect ratio (1:10) and coating thickness of 21.4 nm, the compressive strength increases by an order of magnitude of 3, towards 1.8 GPa (from below 1 MPa for uncoated CNT pillars) and the elastic modulus increases towards 125 GPa. These results show that our coated CNT pillars, which can serve as vertical interconnects and 3D super-capacitors, can be transformed into robust high-aspectratio 3D-micro architectures with semiconductor device compatible processes.

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High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

Ahmad

Anguita

Stolojan

et al. 2015

Adv Funct Materials

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Keywords: nanomaterials, carbon nanotubes, photothermal chemical vapor deposition, low temperature growth 2 For carbon nanotubes (CNTs) to be exploited in electronic applications the growth of high quality material on conductive substrates at low temperatures (< 450 o C) is required. CNT quality is known to be strongly degraded when growth is conducted on metallic surface at low temperatures using conventional chemical vapor deposition (CVD). Here, we demonstrate production of high quality vertically-aligned CNTs at low substrate temperatures (350 -440 o C) on conductive TiN thin film using photo-thermal CVD by confining the heat required for growth to just the catalyst using an array of optical lamps and by optimizing the thickness of the TiN under-layer. The thickness of the TiN plays a crucial role in determining various properties including diameter, material quality, number of shells and metallicity. The highest structural quality with a visible Raman D-to G-band intensity ratio as low as 0.13 is achieved for 100 nm TiN thickness grown at 420 o C; a record low value for low temperature CVD grown CNTs. Electrical measurements of high density CNT arrays show the resistivity to be 1.25×10 -2 Ωcm represents some of the lowest values reported. Finally, the broader aspects of using this approach as a scalable technology for carbon nanomaterial production are also discussed.3

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Carbon nanotube vertical interconnects fabricated at temperatures as low as 350°C

Cited by 52 publications

References 29 publications

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Tailoring the Mechanical Properties of High‐Aspect‐Ratio Carbon Nanotube Arrays using Amorphous Silicon Carbide Coatings

High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

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