Carbon Nitride-Supported Nickel Oxide Nanoparticles for Resistive Memory Application

Abstract

An in situ protocol is described for the preparation of carbon nitride (CN)-supported nickel oxide nanoparticles using a high-temperature route. The microscopic characterization has confirmed the formation of highly dispersed nickel oxide nanoparticles within the range of 5–10 nm. The optical properties of the composite system have confirmed the functionalization of nanoparticles with the CN matrix, while the X-ray diffraction pattern indicates the formation of the monoclinic phase of nickel oxide. The electrical properties of the CN–nickel oxide (CNNO) hybrid system were evaluated in the form of a device that exhibited an electroforming process followed by a bipolar RESET and SET phenomena with an ON–OFF ratio of ∼2 × 104, recorded at 1.5 V. The resistive switching device, also known as memristor, exhibited excellent endurance (104 cycles) and retention (104 s) properties with a consistent ON–OFF ratio between the high resistance state and low resistance state. The electrical rewritable characteristics of the devices exhibited a current difference of 0.6 mA, between two Read voltages, READON–READOFF (R1–R0). In this study, the nonvolatile resistive memory behavior of the CNNO-based material was also displayed pictographically using 3 × 3 bit memory cells.

Ultrafine Nickel Sulfide-Based Bipolar Resistive Switching Device as Artificial Synapses for Neuromorphic Application

“…The two other peaks at 862.3 and 879.5 eV are considered as shake-up satellite peaks. The XPS spectrum for nickel suggested the presence of Ni­(II) species in the sample. , The deconvoluted S 2p spectrum (Figure D) contains two spin–orbit peaks at 162.9 (2p 3/2 ) and 164.0 eV (2P 1/2 ), attributed to the Ni–S bond. , …”

“…The XPS spectrum for nickel suggested the presence of Ni(II) species in the sample. 42,43 The deconvoluted S 2p spectrum (Figure 3D) contains two spin−orbit peaks at 162.9 (2p 3/2 ) and 164.0 eV (2P 1/2 ), attributed to the Ni−S bond. 44,45 Figure 4A shows the X-ray diffraction (Philips PANalytical X'pert diffractometer) pattern of hexamethylenediaminestabilized nickel sulfide nanoparticles recorded in the range (2θ) of 15−80°with a step size of 0.02°.…”

Role of Carbon Nitride on the Resistive Switching Behavior of a Silver Stannate Based Device: An Approach to Design a Logic Gate Using the CMOS–Memristor Hybrid System

“…The XPS survey spectrum of the synthesized material clearly reveals the presence of carbon, nitrogen, oxygen, silver, and tin (Figure A). The high-resolution O 1s spectrum (Figure B) shows a symmetric pattern peak at 529.3, which indicates the presence of only one type of metal–oxygen bond . The high-resolution Ag 3d spectrum was deconvoluted into two peaks, positioned at 368.3 and 374.3 eV, corresponding with Ag 3d 5/2 and Ag 3d 3/2 , respectively, indicating the Ag (I) state (Figure C).…”

“…The high-resolution O 1s spectrum (Figure 3B) shows a symmetric pattern peak at 529.3, which indicates the presence of only one type of metal− oxygen bond. 32 The high-resolution Ag 3d spectrum was deconvoluted into two peaks, positioned at 368.3 and 374.3 eV, corresponding with Ag 3d 5/2 and Ag 3d 3/2 , respectively, indicating the Ag (I) state 33 (Figure 3C). The deconvoluted Sn 3d spectrum exhibited two peaks with the binding energies of 486.5 and 495.0 eV, which correspond with Sn 3d 5/2 and Sn 3d 3/2 , respectively, indicating the presence of a Sn (IV) state 34 (Figure 3D).…”

Nonvolatile Bioresistive Random Access Memory Based on Glycine max and Graphene Oxide

“…Therefore, it can be judged that the current has a linear relationship with the voltage in the LRS, which conforms to ohmic conduction. 47 The slope of the curve is divided into two parts at HRS: the slopes of the first part are 0.88, 1.02, 1.11, and 1.12, respectively, which is linear and belongs to ohmic conduction; 48 the slopes of the second part are 1.85, 1.49, 2.29, and 3.81, respectively, which are consistent with the space charge trap theory (SCLC). 49,50 Under the excitation of a high voltage, the number of oxygen vacancies in GO increases, enhancing the space charge trapping ability.…”