Carbon–Oxygen Radical Assisted Growth of Defect‐Free Graphene Films Using Low‐Temperature Chemical Vapor Deposition

Abstract

Low‐temperature chemical vapor deposition growth of graphene films is a long‐term pursuit in the graphene synthesis field because of the low energy consumption, short heating‐cooling process and low wrinkle density of as‐obtained films. However, insufficient energy supply at low temperature (below 850 °C) usually leads to the difficulty in carbon source dissociation, graphene growth, and defect healing. Herein, a Carbon–Oxygen (C─O) radical assisted strategy is proposed for low‐temperature growth of defect‐free, wrinkle‐free, and single‐crystalline graphene films by using methanol precursor. We provide a deep insight into the growth process fueled by methanol precursor, unveiling the dissociation pathway of methanol and the roles of intermediate C─O radicals in carbon attaching and assembling to graphene lattice without defect formation. This method shows promising prospects in the cost‐effective production of high‐quality graphene films and provides inspiration for growing other 2D materials.