We synthesized new chemically amplified photoresists for 193-nm lithography. Norbornene substituted with a derivative of bile acid was copolymerized with maleic anhydride by free radical polymerization. The resulting copolymers have good transmittance at 193 nm and possess excellent thermal stability up to 260 °C. With the standard developer, the resists formulated with the copolymers form 0.15–0.18 µm patterns at doses of 6–7 mJ cm−2 using an ArF excimer laser stepper.