Carbon-rich hexagonal (BN)C alloys

Uddin, M. R.; Li, J.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.4921931

Cited by 22 publications

(18 citation statements)

References 30 publications

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“…Uddin et al . recently proposed that the G peak of graphene downshifts (towards the h-BN phonon line), when a homogeneous single phase alloy of h-BNC is formed 51 . Nevertheless, the overall shape of the Raman spectra (e.g.…”

Section: Resultsmentioning

confidence: 99%

A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

Wofford

Nakhaie

Krause

et al. 2017

Sci Rep

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Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials.

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Section: Resultsmentioning

confidence: 99%

A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

Wofford

Nakhaie

Krause

et al. 2017

Sci Rep

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“…All layers were grown using hydrogen as a carrier gas. Similar to previous studies, [38][39][40] high resolution x-ray photoelectron spectroscopy (XPS) measurements were employed to estimate the carbon doping concentration (N C ) and N C is around 1 Â 10 21 cm À3 as determined from XPS tight scans after removing surface contaminants by Arþ ion sputtering. Undoped h-BN epilayers with a thickness of about 60 nm were also grown at the same growth conditions for comparison measurements.…”

Section: (A) a A)mentioning

confidence: 99%

Probing carbon impurities in hexagonal boron nitride epilayers

Uddin

Lin

et al. 2017

Applied Physics Letters

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Carbon doped hexagonal boron nitride epilayers have been grown by metal organic chemical vapor deposition. Photocurrent excitation spectroscopy has been utilized to probe the energy levels associated with carbon impurities in hexagonal boron nitride (h-BN). The observed transition peaks in photocurrent excitation spectra correspond well to the energy positions of the bandgap, substitutional donors (C B , carbon impurities occupying boron sites), and substitutional acceptors (C N , carbon impurities occupying nitrogen sites). From the observed transition peak positions, the derived energy level of C B donors in h-BN is E D $ 0.45 eV, which agrees well with the value deduced from the temperature dependent electrical resistivity. The present study further confirms that the room temperature bandgap of h-BN is about 6.42-6.45 eV, and the C N deep acceptors have an energy level of about 2.2-2.3 eV. The results also infer that carbon doping introduces both shallow donors (C B) and deep acceptors (C N) via self-compensation, and the energy level of carbon donors appears to be too deep to enable carbon as a viable candidate as an n-type dopant in h-BN epilayers.

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“…However, PL peak for the B composition of 9.5% showed a saturation tendency due to the phase separation after B incorporation as one of the possibilities. The realized maximum PL peak energy in this work has not been achieved by conventional h‐BCN alloys in previous investigations . For the creation of metal‐free and/or nontoxic materials with an environment‐friendly elemental strategy, this system can contribute to the development of functional materials as carbon‐based semiconductor systems.…”

Section: Resultsmentioning

confidence: 87%

“…Therefore, h‐BCN realizes several electronic properties of band insulator, semiconductor, and metal and has received much attention as a promising material for an environment‐friendly element strategy. In practice, the syntheses of C‐doped h‐BN and BN‐doped C 2 by metalorganic vapor phase epitaxy with alternately supplying B, C, and N species have been reported . However, the compositions of these h‐BCN films have been achieved only in the vicinity of h‐BN ( x < 0.05) or C 2 ( x > 0.95) regions because of strong chemical bonds of C—C and B—N, indicating the immiscibility of h‐BN or C 2 .…”

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials

Urakami

Kosaka

Hashimoto

2019

Physica Status Solidi (b)

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This article discusses the growth of B atoms incorporated into the graphitic carbon nitride (g-C 3 N 4 ) thin films on c-plane sapphire substrates at various growth temperatures by thermal chemical vapor deposition (CVD) using melamine and ammonia borane as precursors. The B incorporation is achieved at a growth temperature of 618 C, which is slightly higher than the optimal growth temperature of g-C 3 N 4 thin films. The signal peak for the B 1s core level attributed to B-N bonds is observed by X-ray photoelectron spectroscopy, indicating the realization of B incorporation into g-C 3 N 4 films. With an increase in the growth temperature up to 650 C, a monotonically increasing B composition and a decreasing C composition are observed, implying that B atoms are incorporated into g-C 3 N 4 by the substitution into C sites. A shift of photoluminescene (PL) peak energy is observed. The PL peak shifts from 2.75 eV for unintentionally doped thin film to 3.60 eV for B-incorporated thin films with a composition of 8.0%. The B composition dependence of PL peak energies is in good agreement with the quadratic function, suggesting that the bandgap bowing occurs due to B incorporation into the g-C 3 N 4 thin films as in conventional compound semiconductor alloys.

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Carbon-rich hexagonal (BN)C alloys

Cited by 22 publications

References 30 publications

A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

Probing carbon impurities in hexagonal boron nitride epilayers

Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials

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