Carbon Thin Film on Silicon by Acetylene DC Plasma Deposition System

Abstract

This work aims to develop a low pressure DC plasma deposition system to coat carbon thin film on silicon substrate. The system use a parallel of grounding iron electrode and cathode copper electrode to ignite the plasma. The vacuum pressure was achieved by two stage rotary vane vacuum pump which is capable to reach ultimate pressure at 2×10-1 Pa under a glass chamber. The carbon thin films was deposited on silicon substrate by pure acetylene plasma with gas flow rate at 30 ml/min at total operating pressure of approximately at -70 cmHg reading by analog dial vacuum gauge. Energy Dispersive X-Ray spectroscopy was used to indicate the elements contained in the film. The morphology and the thickness of the film was investigated by scanning electron microscope. Raman analysis showed peak at around 1345 cm-1 (D-peak) and 1579 cm-1 (G-peak), by utilizing ID and IG can be evaluated that there are 46.45% of sp3 contained in deposited film.