Carrier-concentration<i>–</i>induced ferromagnetism in PbSnMnTe

Story, T.; Galazka, R. R.; Frankel, Richard B.; Wolff, Peter

doi:10.1103/physrevlett.56.777

Cited by 366 publications

(175 citation statements)

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“…For the systems with high holes concentration carrier induced FM interaction becomes important and may override AFM superexchange, leading to FM order. We note that a similar situation was observed for Mn-based IV-VI DMS, which show FM or paramagnetic behavior depending on the hole concentration [7]. Also for quantum wells fabricated of Mn-based II-VI DMS (CdMnTe or ZnMnTe), FM interaction arises if the wells are filled with holes [8].…”

Section: The Coupling Between Mn Ions (Resulting From D-d Exchange Inmentioning

confidence: 72%

“…This d-d exchange may produce a spinglass phase in a certain temperature and composition range [1][2][3], as well as a truly long ranged AFM order [5,6]. For the systems *e-mail: andrzej.twardowski@fuw.edu.pl (203) with high free holes concentration carrier induced ferromagnetic (FM) coupling occurs [7,8]. This coupling may override AFM superexchange and yield FM ordering of magnetic moments system.…”

Section: Introductionmentioning

confidence: 99%

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Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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During recent years diluted magnetic semiconductors based on III-V compounds have been of considerable interest. In this respect we review the basic properties of these materials, which are nearly exclusively Mn-based systems, such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn impurity. Different Mn centers are considered and experimental pieces of evidence suggesting the dominating role of Mn (d5 ) configuration are given. Then we analyze s, p -d exchange, together with resulting magnetooptical properties (in particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering observed in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering are presented. Finally we discuss transport properties and some selected problems of quantum structures based on III-V diluted magnetic semiconductors.

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Section: The Coupling Between Mn Ions (Resulting From D-d Exchange Inmentioning

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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“…104 Ferromagnetic order with Mn doping was obtained previously, for example, in (Sn,Mn)Te (Escorne et al, 1974), (Ge,Mn)Te (Cochrane et al, 1974), and (Pb,Sn,Mn)Te (Story et al, 1986). 105 In magnetic multilayers GMR is typically dominated by interfacial scattering (Parkin, 1993), while in MTJ's it is the surface rather than the bulk electronic structure which influences the relevant spin polarization.…”

Section: B Materials Considerationsmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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“…3 are particularly intriguing because they demonstrate post-synthetic manipulation of 300 K ferromagnetism in both Mn 2 :ZnO and Co 2 :ZnO. To date, relatively few analogous chemical perturbations of DMS ferromagnetism have been demonstrated, all involving n-type defects [7,25]. Although uncertainties still surround some of these, such perturbations could become important mechanistic tools for testing and refining theoretical models.…”

Section: H Y S I C a L R E V I E W L E T T E R Smentioning

confidence: 99%