2021
DOI: 10.1016/j.jallcom.2020.157094
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Carrier control in CuAgSe by growth process or doping

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Cited by 8 publications
(21 citation statements)
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“…It can be found that all the CuAgSe samples in the a-phase exhibit extremely low lattice thermal conductivity, which is in the range between 0.21 and 0.43 W m −1 K −1 at 630 K. This is lower than the results of many previous works, 22,25,[47][48][49] and is close to the lowest value of 0.20 W m −1 K −1 reported by Han et al 24 The reason for such low lattice thermal conductivity is apparently the ball milling method for the sample preparation, which produces large amounts of grain boundaries to enhance the phonon scattering. For a similar reason, the CuAgSe nanocrystals prepared by the aqueous approach achieved even lower k L of 0.20 W m −1 K −1 at 630 K. 24 The secondary phases may also act as phonon scattering centers, which further suppress the k L .…”
Section: Thermal Transport Performancementioning
confidence: 54%
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“…It can be found that all the CuAgSe samples in the a-phase exhibit extremely low lattice thermal conductivity, which is in the range between 0.21 and 0.43 W m −1 K −1 at 630 K. This is lower than the results of many previous works, 22,25,[47][48][49] and is close to the lowest value of 0.20 W m −1 K −1 reported by Han et al 24 The reason for such low lattice thermal conductivity is apparently the ball milling method for the sample preparation, which produces large amounts of grain boundaries to enhance the phonon scattering. For a similar reason, the CuAgSe nanocrystals prepared by the aqueous approach achieved even lower k L of 0.20 W m −1 K −1 at 630 K. 24 The secondary phases may also act as phonon scattering centers, which further suppress the k L .…”
Section: Thermal Transport Performancementioning
confidence: 54%
“…For b-CuAgSe, PF in Se-decient CuAgSe is higher than that of CuAg-decient samples containing the secondary phase, which mainly originates from the The n-p conduction type transition in CuAgSe has been reported in several previous works, 19,[22][23][24]36,[46][47][48][49] but the results in these works show some conicts. For example, several works reported that there is no n-p transition in stoichiometric CuAgSe, 23,25,36,47,49 while many other works show clear n-p transition in the stoichiometric CuAgSe samples. 19,22,24,46,48 Nevertheless, it is a common result that the non-stoichiometric CuAgSe materials show n-p transition except for the samples with very slight Cu or Ag deciency.…”
Section: Electrical Transport Performancementioning
confidence: 82%
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“…Better thermoelectric performance is found in CuAgSe: zT is ≈0.4 at room temperature [129,137,138] and exceeds 0.8 above 600 K. [129,140] Several routines have been employed to enhance the performance such as S or Te alloying, [138] tuning the atomic ratio, [137][138][139] and doping. [141,142] There is also an n-p transition in CuAgSe upon the phase transition with a dramatic reduction of electrical conductivity. [129] The single-phase CuAgTe cannot exist at room temperature but will transform to a single cubic phase above 460 K. [67] Roychowdhury et al reported a high zT of 1.6 at 670 K. [67] Ren et al Table 2.…”
Section: Te Propertiesmentioning
confidence: 99%