Carrier decay and luminescence characteristics in hadron irradiated MOCVD GaN

Gaubas, E.; Čeponis, T.; Pavlov, J.; Jasiunas, A.; Jonkus, Vytautas; Meškauskaite, D.; Tekorius, A.

doi:10.1088/1748-0221/9/12/c12044

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…GaN and its AlGaN alloys are promising materials for modern and future electronic devices applied in medicine, telecommunication and radiation monitoring equipment [1][2][3]. Exceptional feature of the detectors made of these materials would be capability to generate double responses (electrical and optical).…”

Section: Introductionmentioning

confidence: 99%

“…Exceptional feature of the detectors made of these materials would be capability to generate double responses (electrical and optical). Moreover, AlGaN materials show high efficiency of luminescence and enhanced tolerance to radiation damage [2]. The important requirements in fabrication of particle detectors for high energy physics (HEP) experiments are the rather small amount of point as well as extended defects and the homogeneity of the crystals.…”

Section: Introductionmentioning

confidence: 99%

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Modification of characteristics of AlGaN photodiodes by 1.6 MeV proton irradiation

Pavlov¹,

Čeponis²,

Deveikis³

et al. 2020

J. Inst.

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The wide direct-bandgap AlGaN is one of the most promising materials for fabrication of radiation hard, double response particle detectors for future collider facilities. However, formation of defects is unavoidable during growth and fabrication of AlGaN based devices. Furthermore, radiation defects are formed in detector structures during operation at extreme conditions. In this work, the study of electrical and optical characteristics after 1.6 MeV proton irradiation has been performed. Commercial photodiodes of GaN and AlGaN (with various Al concentrations) fabricated using epi-layers grown by metalorganic chemical vapor deposition technique on sapphire substrate have been examined. Electrical characteristics of the devices have been examined by combining pulsed technique of barrier evaluation by linearly increasing voltage, steady-state photoionization and deep level transient spectroscopy.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modification of characteristics of AlGaN photodiodes by 1.6 MeV proton irradiation

Pavlov¹,

Čeponis²,

Deveikis³

et al. 2020

J. Inst.

Self Cite

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In situ characterization of radiation sensors based on GaN LED structure by pulsed capacitance technique and luminescence spectroscopy

Gaubas

Čeponis

Meškauskas

et al. 2017

Sensors and Actuators A: Physical

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Breakdown characteristics of deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiodes

Jeong

Cho

et al. 2022

Journal of Applied Physics

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A top-illuminated deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiode (APD) structure was designed and grown by metalorganic chemical vapor deposition on an AlN bulk substrate and on two different quality AlN/sapphire templates, and APDs were fabricated and tested. The APD devices with a circular diameter of 20 μm have demonstrated a distinctive reverse-bias breakdown behavior. The reverse breakdown voltage of the APDs is approximately −140 V, which corresponds to a breakdown electric field of 6–6.2 MV/cm for the Al0.6Ga0.4N material as estimated by Silvaco TCAD simulation. The APDs grown on the AlN bulk substrate show the lowest leakage current density of <1 × 10−8 A/cm2 (at low reverse bias) compared to that of the devices grown on the AlN templates. From the photocurrent measurement, a maximum gain (current limited) of 1.2 × 104 is calculated. The average temperature coefficients of the breakdown voltage are negative for APD devices fabricated from both the AlN bulk substrate and the AlN templates, but these data show that the coefficient is the least negative for the APD devices grown on the low-dislocation-density AlN bulk substrate.

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Carrier decay and luminescence characteristics in hadron irradiated MOCVD GaN

Cited by 3 publications

References 13 publications

Modification of characteristics of AlGaN photodiodes by 1.6 MeV proton irradiation

Modification of characteristics of AlGaN photodiodes by 1.6 MeV proton irradiation

In situ characterization of radiation sensors based on GaN LED structure by pulsed capacitance technique and luminescence spectroscopy

Breakdown characteristics of deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiodes

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