Carrier dependence of the spontaneous emission factor in DBR lasers

Ramoo, D.; Adams, M.J.

doi:10.1016/s0030-4018(00)00739-2

Cited by 5 publications

(8 citation statements)

References 9 publications

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“…Figure 4 shows that R spon (E) is defined only above the to active zone gap level (E > E g ). The light emission observed under the active zone gap level (E < E g ) on experimental L(E) curve corresponds to thermal agitation of the crystal lattice 25 . The band gap level of GaAs is close to 1.38 eV at 400 K and the active zone band gap level is close to 1.26 eV 35,36 .…”

Section: Optical Characterizationsmentioning

confidence: 90%

“…Figure 13 shows the bias current dependence for minimal lifetime t EOLmin , mean lifetime (MTTF) and maximal lifetime t EOLmax , according to Equations (25). This extrapolation methodology shows that factor β, defined in Equation (22), can be considered as constant versus current using activation energy E a close to 0.5 eV 2,7 .…”

Section: Relation Between Degradation Law and Lifetime Estimationmentioning

confidence: 99%

“…The strong interest in L(E) measurements, complementary to I (V ) and P (I ) characteristics, has been demonstrated in a previous paper and used in this study to improve failure diagnostics and reliability investigations 22 . In particular, electrical and optical parameters, relative to the active zone of the LED, can be determined from comparisons between I (V ), P (I ) and L(E) experimental curves and physical models using similar methodologies are reported in many papers [22][23][24][25] .…”

Section: Technological Description and Electro-optical Characterizationsmentioning

confidence: 99%

“…The energy spectrum drift traditionally highlights a degradation in the heterostructure. Considering carrier recombinations in LEDs, spontaneous recombination probability R spon (E) is preeminent compared with stimulated recombination probability R stim (E) and is generally evaluated at more than 0.9 1,23,25,31 . Physical modelling, proposed by Rosencher and Winter 23 and experimentally observed by Ramoo and Adams 25 , is built from theoretical expression of spontaneous emission R spon (E) given by the following well-known equation:…”

Section: Optical Characterizationsmentioning

confidence: 99%

“…Using an extrapolation from Equations (25), the relationship between the lifetime of LEDs is provided for operating conditions (100 mA, 398 K) and initial optical power P 0 , allowing us to select LEDs considering the initial optical power P 0 distribution, f (P 0 ). This method could lead to a go-no go test to qualify production lots.…”

Section: Reliability Investigations Using Technological Dispersionmentioning

confidence: 99%

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Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Deshayes

Béchou

Verdier

et al. 2005

Quality & Reliability Eng

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Numerous papers have already reported various results on electrical and optical performances of GaAs-based materials for optoelectronic applications. Other papers have proposed some methodologies for a classical estimation of reliability of GaAs compounds using life testing methods on a few thousand samples over 10 000 hours of testing. In contrast, fewer papers have studied the complete relation between degradation laws in relation to failure mechanisms and the estimation of lifetime distribution using accelerated ageing tests considering a short test duration, low acceleration factor and analytical extrapolation. In this paper, we report the results for commercial InGaAs/GaAs 935 nm packaged light emitting diodes (LEDs) using electrical and optical measurements versus ageing time. Cumulative failure distributions are calculated using degradation laws and process distribution data of optical power. A complete methodology is described proposing an accurate reliability model from experimental determination of the failure mechanisms (defect diffusion) for this technology. Electrical and optical characterizations are used with temperature dependence, short-duration accelerated tests (less than 1500 h) with an increase in bias current (up to 50%), a small number of samples (less than 20) and weak acceleration factors (up to 240).

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Section: Optical Characterizationsmentioning

confidence: 90%

Section: Relation Between Degradation Law and Lifetime Estimationmentioning

confidence: 99%