Carrier Depletion Silicon Ring Modulator Power Penalty Versus Power Coupling Coefficient

Quelene, Jean-Baptiste; Michard, Audrey; Michit, Nicolas; Carpentier, Jean‐François; Maître, Patrick Le; Guennec, Yannis Le

doi:10.1109/jlt.2018.2834627

Cited by 7 publications

(2 citation statements)

References 14 publications

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“…To obtain a high modulation data rate, the modulation BW is the dominant factor. Hence most modulators use carrier-depleted p-n junction structures [20][21][22][23][24].…”

Section: Physics Of Eo Modulationmentioning

confidence: 99%

Silicon electro-optic modulators based on microscopic photonic structures: from principles to advanced modulation formats

Yu¹,

Zeng²,

Xiang³

et al. 2023

J. Phys. D: Appl. Phys.

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This paper reviews the progress of electro-optic modulators composed of silicon-based microscopic photonic structures. The basic principles, device structures, and advanced modulation capability of different geometric types are detailed for micro-ring modulators, photonic crystal modulators, and other related modulators. We illustrate the device operation mechanism with a focus on its photonic aspect and discuss their impacts on the modulator speed, power consumption, and thermal stabilities. The cavity enhancement and slow light effect significantly reduce the device footprint and power consumption, with the trade-off of limited operation wavelength range. Other emerging microscopic photonic structure-based silicon modulators for advanced modulation formats exhibit promising performance for further optimizations. Finally, we discuss the existing challenges and further directions of microscopic photonic structure-based silicon modulators for pertinent applications.

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“…To obtain a high modulation data rate, the modulation BW is the dominant factor. Hence most modulators use carrier-depleted p-n junction structures [20][21][22][23][24].…”

Section: Physics Of Eo Modulationmentioning

confidence: 99%

Silicon electro-optic modulators based on microscopic photonic structures: from principles to advanced modulation formats

Yu¹,

Zeng²,

Xiang³

et al. 2023

J. Phys. D: Appl. Phys.

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show abstract

“…In [13], a silicon micro ring modulators based on zigzag pn junctions is presented with a 10-dB extinction ratio at a resonant wavelength shift of 0.08 nm. Carrier depletion silicon ring modulator power penalty versus power coupling coefficient is presented in [14] with a 6-dB extinction ratio is reported at a 0.03-nm wavelength shift.…”

Section: Introductionmentioning

confidence: 99%

A compact ring modulator with very large extinction ratio and high quality factor fabricated in AIM photonics technology at Albany Nanotech Complex

Uddin¹,

Wallner²,

Dikshit³

et al. 2023

Optical Components and Materials XX

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In this work, we demonstrate a compact pn junction ring modulator with very large extinction ratio and high quality factor. The modulator consists of a 5-μm radius ring and a single-bus straight waveguide. Both the ring and straight waveguides have a width of 480 nm and heigh of 220 nm. The waveguides are rib-structured and the rib thickness is 110 nm with a slab thickness of 110 nm from a 300mm wafer with 220-nm silicon-on-insulator (SOI) thickness. A 100-nm gap is designed between the rib ring and the bus waveguides. The modulator has three nominal doping levels with concentrations of 1018, 1019, and 1020 cm-3 for the core, slab, and the contact areas, respectively. The device is fabricated using the American Institute for Manufacturing integrated Photonics (AIM Photonics) Multi-Project Wafer (MPW) service. It is tested using the AIM Photonics inline vertical gratting coupled automated tool with a tunable light source that has wavelengths ranging from 1485 nm to 1590 nm and a wavelength resolution of 60 pm. The fabricated 5-μm radius ring modulator exhibits high quality output with a very large extinction ratio of 29 dB over a broad wavelength spectrum of about 100 nm. The device has a very wide free spectral range (FSR) of about 19 nm.

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Graphene-Based Silicon Photonic Electro-Absorption Modulators and Phase Modulators

Wu,

Reep,

Brems

et al. 2024

IEEE J. Select. Topics Quantum Electron.

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Carrier Depletion Silicon Ring Modulator Power Penalty Versus Power Coupling Coefficient

Cited by 7 publications

References 14 publications

Silicon electro-optic modulators based on microscopic photonic structures: from principles to advanced modulation formats

Silicon electro-optic modulators based on microscopic photonic structures: from principles to advanced modulation formats

A compact ring modulator with very large extinction ratio and high quality factor fabricated in AIM photonics technology at Albany Nanotech Complex

Graphene-Based Silicon Photonic Electro-Absorption Modulators and Phase Modulators

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