Carrier dynamics and excitation of 
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 ions in GaN

Timmerman, Dolf; Mitchell, Brandon; Ichikawa, Shuhei; Nagai, Masaya; Ashida, Masaaki; Fujiwara, Yoshihiro

doi:10.1103/physrevb.101.245306

Cited by 12 publications

(5 citation statements)

References 28 publications

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“…Additionally, our latest study has revealed that Eu 3+ ions are very efficient at trapping injected carriers resulting in shorter carrier diffusion lengths (∼100 nm) and significantly suppresses the decrease in quantum efficiency, realizing values of ∼90% of the maximum value for the sizes as small as 3 μm. 4,5) However, there still remain limitations associated with damaged sidewalls when the chip size of such GaN:Eu-based μ-LEDs would further decrease to the submicron sizes.…”

Section: Introductionmentioning

confidence: 99%

Formation and optical characteristics of GaN:Eu/GaN core–shell nanowires grown by organometallic vapor phase epitaxy

Otabara

Tatebayashi

Hasegawa

et al. 2022

Jpn. J. Appl. Phys.

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We report on the formation and optical characteristics of Eu-doped GaN (GaN:Eu)/GaN core-shell nanowires (NWs) grown by organometallic vapor phase epitaxy. Moderate V/III ratio and growth temperature enables Eu incorporation into GaN:Eu/GaN core-shell NWs with highest-efficiency Eu3+ luminescence in the GaN:Eu shell, resulting in red luminescence at room temperature whose photoluminescence is >20 times stronger than GaN:Eu films on planar GaN. The cathodoluminescence characterization corroborates that observed enhanced Eu luminescence originate from Eu3+ ions with high luminous efficiency center doped predominantly in the sidewalls of the GaN:Eu/GaN core-shell NWs.

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Section: Introductionmentioning

confidence: 99%

Formation and optical characteristics of GaN:Eu/GaN core–shell nanowires grown by organometallic vapor phase epitaxy

Otabara

Tatebayashi

Hasegawa

et al. 2022

Jpn. J. Appl. Phys.

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“…In addition, the maximum ratio of Eu luminescence to background luminescence driven at 40 mA. The ratio increases with injection current up to 40 mA due to efficient trapping of carriers by traps related to Eu ions 6) but the ratio decreases when driven >40 mA. This tendency indicates that the electron overflown into the p-GaN shells through GaN:Eu active regions from the n-GaN core NWs has a significant impact on the luminescence of NW LED devices.…”

Section: Resultsmentioning

confidence: 99%

“…However, there remain limitations associated with damaged sidewalls when decreasing the pixel size of μ-LEDs based on GaN:Eu to submicron sizes, even though Eu 3+ ions are very efficient at trapping injected carriers and drastically suppress the decrease in quantum efficiency. 5,6) Growth of nanowire (NW) nanostructures can be realized utilizing a bottom-up approach via vapor-liquid-solid method 7) by molecular beam epitaxy [8][9][10] or selective growth by organometallic vapor phase epitaxy (OMVPE), [11][12][13][14] which is in contrast to the conventional top-down approach for μ-LEDs utilizing dry-etching processes. The composition and morphology of NWs can be controlled during the growth and hence NWs do not suffer from the damage induced by etching.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of GaN:Eu/GaN nanowire light emitting diodes grown by selective-area organometallic vapor phase epitaxy

Otabara

Tatebayashi

Yoshimura

et al. 2023

Jpn. J. Appl. Phys.

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We report on the demonstration of GaN:Eu/GaN nanowire (NW) light emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). The GaN:Eu/GaN NW LED structures with a large aspect ratio (>8) are formed by selective-area OMVPE, and have pedestals that are free from lateral overgrowth of p-GaN in order to prevent short circuiting. The structures are embedded in polydimethylsiloxane followed by a wet-etching process to expose the tips of NW LEDs for contacting. Red luminescence with a narrow linewidth originating from Eu3+ ions was observed at room temperature under current injection in the GaN:Eu/GaN NW LEDs.

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“…However, there remain limitations associated with damaged sidewalls when decreasing the pixel size of μ-LEDs based on GaN:Eu to submicron sizes, even though Eu 3+ ions are very efficient at trapping injected carriers and drastically suppress the decrease in quantum efficiency. 5,6 Semiconductor nanowire (NW)-based light emitters have been exploited as ultra-small, highly efficient coherent light sources and have at least one dimension comparable to the diffraction limit of its emission wavelengths. Growth of NWs can be realized utilizing a bottom-up approach via vapor-liquid-solid method 7 by molecular beam epitaxy [8][9][10] or selective growth by metalorganic vapor phase epitaxy (MOVPE), [11][12][13][14] which is in contrast to the conventional topdown approach for μ-LEDs utilizing dry-etching processes.…”

mentioning

confidence: 99%

Formation and Optical Characteristics of GaN:Eu/GaN Nanowires for Applications in Light-Emitting Diodes

Tatebayashi,

Otabara,

Yoshimura

et al. 2023

ECS J. Solid State Sci. Technol.

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This paper reviews our recent research on the formation and optical characteristics of GaN:Eu/GaN nanowires (NWs) by metalorganic vapor phase epitaxy for application in GaN-based red light-emitting diodes (LEDs). Two types of GaN:Eu/GaN NWs with different configurations are introduced, core-shell and axial geometries. The configuration of GaN:Eu layers on GaN core NWs can be controlled by changing the growth conditions, and affects the properties of Eu luminescence in the GaN NWs. Next, the optimization of the p-GaN growth conditions is performed to allow to form the p-GaN shell layers on the NWs with the pedestal of the NWs free from radial overgrowth, resulting in efficient electrical isolation between top and bottom part of the NWs. Then, the fabrication process of the NW LEDs towards future possible realization of flexible devices is established, including an etch-back process of the PDMS membranes to expose the top p-GaN contact layers. Finally, a proto-type of p-GaN/GaN:Eu/n-GaN NW LEDs on sapphire substrates is fabricated to characterize the device characteristics. Sharp red luminescence at room temperature from Eu3+ ions is observed under current injection. These results would pave the way towards the realization of flexible light-emitting devices utilizing NW structures based on compound semiconductors.

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Carrier dynamics and excitation of Eu3+ ions in GaN

Cited by 12 publications

References 28 publications

Formation and optical characteristics of GaN:Eu/GaN core–shell nanowires grown by organometallic vapor phase epitaxy

Formation and optical characteristics of GaN:Eu/GaN core–shell nanowires grown by organometallic vapor phase epitaxy

Demonstration of GaN:Eu/GaN nanowire light emitting diodes grown by selective-area organometallic vapor phase epitaxy

Formation and Optical Characteristics of GaN:Eu/GaN Nanowires for Applications in Light-Emitting Diodes

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