Carrier dynamics and intervalley scattering in InN

Yang

et al. 2021

Small

Among programmable nuclease‐based genome editing tools, the clustered regularly interspaced short palindromic repeats (CRISPR) system with accuracy and the convenient operation is most promising to be applied in gene therapy. The development of effective delivery carriers for the CRISPR system is the major premise to achieve practical applications. Although many nanocarrier‐mediated deliveries have been reported to be safer and cheaper over the physical and viral delivery, the accumulation at disease sites or controllability with the spatial or temporal resolution are still desired on nanocarriers to reduce side effects and off‐target from the CRISPR system. Therefore, the targetable and controllable nanocarriers to actively deliver the CRISPR system are summarized. The cell or even organ selective nanocarriers are introduced first, followed by the discussion of nanocarriers controlled by biochemical or physical signals. At last, the potential challenges faced by existing nanocarriers are discussed.

Section: Discussionmentioning

confidence: 99%

Active Delivery of CRISPR System Using Targetable or Controllable Nanocarriers

Yang

et al. 2021

Small

Journal of Applied Physics

“…We suggest that the PL formation is due to the "free-to-bound" transition and possible intervalley scattering in the conduction band by studying the radiative lifetimes. 14 …”

Section: Introductionmentioning

confidence: 99%

Carrier recombination dynamics in Si doped InN thin films

Mohanta

Jang

Lin

et al. 2011

Self Cite

Time-integrated and time-resolved photoluminescence (PL) of InN thin films of different background carrier concentrations are investigated. The PL formation mechanism is attributed to the “free-to-bound” transition by analyzing the time-integrated PL spectra at different pump fluences. The dependence of the PL decay time with emission energy is investigated using a theoretical model which speculates upon the carrier localization in InN thin films. The radiative lifetime, mobility edge, and carrier localization energy are obtained from the dependence of the PL decay time on emission energy and are studied at different background carrier concentrations. The effect of intervalley scattering between the Γ1 and Γ3 valley on the radiative lifetime, mobility edge, and carrier localization energy is discussed. The longer radiative lifetime and smaller values of the mobility edge and localization energy for 3.06 eV excitation are observed than that for the 1.53 eV excitation due to the intervalley scattering process.

Progress in Photovoltaics

Review of the mechanisms for the phonon bottleneck effect in III–V semiconductors and their application for efficient hot carrier solar cells

Zhang

Conibeer

Liu

et al. 2022

The hot carrier solar cell aims to significantly boost the power conversion efficiency through fully utilizing the carrier thermalization energy loss. To realize such ultraefficient solar cells, it requires that the excess energy of excited “hot” carriers is captured for power generation by reducing the rate of, or even preventing, carrier cooling. It has been known that phonon bottleneck effects (PBE) play the most decisive role in reducing the carrier thermalization rate. However, the mechanisms underlying PBE are complex and vary in different material systems and are influenced by many factors such as illumination intensity and carrier density (extrinsic), electronic band structure, and phonon dispersion (intrinsic) and quantum confinement (intrinsic). III–V semiconductors are the most popular photovoltaic materials for ultraefficient thin film solar cells due to their high crystal quality and adjustable electronic band structure. Such features reduce some of the complexity of the study of PBE and hot carrier dynamics. Therefore, it is appropriate to identify the PBE mechanisms in these III–V semiconductors. This manuscript systematically reviews the mechanisms underlying PBE in III–V semiconductors in both bulk and nanostructures. There is a tendency for an enhanced PBE in low‐dimensional III–V semiconductors due to quantum and other confinement effects. Multiple quantum wells seem the most promising material system for hot carrier solar cells.