Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells

Abstract

Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells Baranowski, M.; Syperek, M.; Kudrawiec, R.; Misiewicz, J.; Gupta, J.A.; Wu, X.; Wang, R.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=21271287&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=21271287&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1063/1.3548544Applied Physics Letters, 98, 6, 2011 Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells The carrier dynamics in type-II GaAsSb/GaAs quantum well ͑QW͒ is investigated by time-resolved photoluminescence at low temperature. A detailed analysis of the experimental data reveal a complex carrier relaxation scenario involving both delocalized and localized states. We show that the QW emission is controlled by the dynamics of the band bending effect, related to temporal changes in the spatial charge separation near the GaAsSb/GaAs heterointerface, whereas localized states play a significant role in the carrier relaxation/redistribution between QW states.

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

“…4 and 5] heterostructures did not involve time-resolved spectroscopy, though this method allows exact determination of the optical transition type in such structures. 12,21 Up to now, there have been no works concerning temporal evolution of the PL spectra in GaAs/GaAsSb/InGaAs heterostructures, though in this heterosystem, as we show below, it is possible a) Email: krizh@ipmras.ru 0003-6951/2014/104(2)/021108/5/$30.00 V C 2014 AIP Publishing LLC 104, 021108-1 to substantially increase the PL signal at room temperature, as compared with GaAs/GaAsSb, which is important for the possible practical applications. The experimental data presented in this work allow determination of the ground state transition energy as a function of time delay, as well as the dynamics of carrier relaxation from the excited states.…”

“…3,10,11 The achievement of the emission wavelength 1.3 lm in GaAsSb/GaAs QW structures requires growing GaAsSb layers with Sb content about 0.36. 8,12 However, it is well known that the solubility limit of Sb in GaAsSb solid solution is about 0.27. 2,13 Therefore, growth of GaAsSb layers with Sb content about 0.36 can be realized only in nonequilibrium thermodynamic conditions.…”

Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

“…In GaAsBi alloys, the carrier localization is a well-known phenomenon, and the so called S-shape behavior can be seen in the temperature dependent PL under the low excitation conditions. 23,24 In addition, Baranowski et al 25,26 found that the PL kinetics are strongly influenced by the band bending effects as well as the carrier localization effects in type II GaAsSb/GaAs QWs using a time-resolved PL spectroscopy, suggesting that further investigations of the carrier localization phenomena in this InGaAs/GaAsBi QW are needed to evaluate its quality and perspectives for device applications. We believe that the underlying mechanism of the observations results from the band bending effect, which is intrinsic for the type-II band alignment of In 0.2 Ga 0.8 As/ GaAs 0.96 Bi 0.04 heterojunction, similar to the cases of GaAs/ GaAsSb 19 and InGaAs/GaAsSb.…”

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

“…Over the past few decades, many III-V semiconductor materials and devices have been grown using molecular beam epitaxy (MBE) methods [90][91][92][93]. The properties of antimonide materials have been studied intensively.…”