2020
DOI: 10.1063/5.0023545
|View full text |Cite
|
Sign up to set email alerts
|

Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells

Abstract: Relaxation of tensile strain in AlGaN heterostructures grown on GaN template can lead to the formation of cracks. These extended defects locally degrade the crystal quality resulting in a local increase of non-radiative recombinations. The effect of such cracks on the optical and structural properties of core-shell AlGaN/AlGaN multiple quantum wells grown on GaN microwires are comprehensively characterized by means of spectrally and time-correlated cathodoluminescence (CL). We observe that the CL blueshifts ne… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
18
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
5
1

Relationship

4
2

Authors

Journals

citations
Cited by 13 publications
(18 citation statements)
references
References 38 publications
0
18
0
Order By: Relevance
“…Figure 5b shows a SEM image of a typical cracked wire (also A-type structure but with 5 nm Al 0.6 Ga 0.4 N barriers and thin GaN QW thickness corresponding to a growth time of 20 s) and a CL intensity map at ∼5 K: intensity integration over the 270−328 nm range corresponds to the GaN/AlGaN MQW emission. The whole emission is quenched at the crack locations, probably due to a local decrease of the efficiency as observed by Finot et al 21 on core−shell AlGaN/AlGaN MQWs. In our study, the CL signal only comes from the regions between the cracks, showing the detrimental influence of these extended defects on the QW emission.…”
Section: ■ Discussionmentioning
confidence: 61%
See 2 more Smart Citations
“…Figure 5b shows a SEM image of a typical cracked wire (also A-type structure but with 5 nm Al 0.6 Ga 0.4 N barriers and thin GaN QW thickness corresponding to a growth time of 20 s) and a CL intensity map at ∼5 K: intensity integration over the 270−328 nm range corresponds to the GaN/AlGaN MQW emission. The whole emission is quenched at the crack locations, probably due to a local decrease of the efficiency as observed by Finot et al 21 on core−shell AlGaN/AlGaN MQWs. In our study, the CL signal only comes from the regions between the cracks, showing the detrimental influence of these extended defects on the QW emission.…”
Section: ■ Discussionmentioning
confidence: 61%
“…Indeed, one of the major challenges stems from the strain relaxation imposed by the wire core on the Al-rich shell required for UV-B,C emission that leads to crack generation. 21 As the origin of crack formation is directly related to the strain state of the AlGaN/GaN heterostructure, the framework of classical elastic theory is hereafter considered in the case of core−shell structures. Raychaudhuri et al estimate the relative core/shell thicknesses to get a coherent epitaxy from the balance between the elastic strain energy (resulting from lattice mismatch) and the edge dislocation formation energy.…”
Section: ■ Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In addition, the acceleration voltage is kept to 10 kV to efficiently probe the MQW region while having the best possible spatial resolution. The probe current has been set to 4 pA. More details on the SRTC-CL setup can be found in ref 19.…”
Section: T H Imentioning
confidence: 99%
“…Thus, to measure the g 2 (τ) of the CL signal, we built a Hanbury Brown and Twiss (HBT) interferometer to analyze the CL photon statistics [6]. We apply the method to investigate the influence of surface recombinations on the optical properties of InGaN/GaN quantum wells near a mesa edge with a spatial resolution of 100 nm and a time resolution better than 50 ps thanks to spatially-resolved time-correlated cathodoluminescence spectroscopy (SRTC-CL) [7].…”
mentioning
confidence: 99%