Strain
relaxation of nonpolar GaN/Al0.6Ga0.4N multiple
quantum wells grown in core–shell geometry by metal–organic
vapor-phase epitaxy on GaN wires is investigated. Cracking along the a-direction is observed on the sidewalls of c̅-oriented hexagonal GaN wires. To overcome this issue, an undershell
including AlGaN gradient and cladding layers is grown before the active
region. While a decrease of the crack density is observed with the
undershell, the increase of GaN QW thickness acts as a key parameter
to limit the crack formation. In agreement with previous studies performed
on AlGaN planar layers, a relaxation criterion is found for a threshold
strain energy density of ∼4 J/m2. Considering the
quantum well structure as a single AlGaN layer with an average composition,
a solution to keep the strain energy density below this relaxation
limit is identified by reducing the AlGaN barrier thickness from 5
to 3 nm. Combining the undershell and reduced barrier thickness, a
crack-free core–shell AlGaN-based structure is demonstrated
with an emission at 280 nm corresponding to the UV-B/C limit.