Carrier injection and transport in organic field-effect transistor investigated by impedance spectroscopy

Lin, Jack; Weis, Martin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

doi:10.1016/j.tsf.2009.07.023

Cited by 21 publications

(20 citation statements)

References 10 publications

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“…In fact, it has been demonstrated that the transit time in IS is similar to that obtained from I-V measurements but shorter than that observed in TRM-SHG. 56) Here, it should be pointed out that in the discussion we proposed that the transit time was also inversely proportional to the amplitude of the small ac perturbation. Although this assumption seems to be inconsistent with the small signal analysis, the V ac dependent transit time has been observed in experiment (unpublished).…”

Section: Relationship Between the Two Approachesmentioning

confidence: 81%

Channel Formation as an Interface Charging Process in a Pentacene Field Effect Transistor Investigated by Time-Resolved Second Harmonic Generation and Impedance Spectroscopy

Zhang

Taguchi

Masada

et al. 2012

Jpn. J. Appl. Phys.

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The channel formation process in a pentacene field effect transistor was studied by directly probing the carrier motion along the channel in the time domain and the capacitance changes in the frequency domain. With the source and drain electrodes short circuited and the voltage applied only to the gate electrode, the carrier injection from both top electrodes and its motion along the channel was still observable, implying an interface charging process driven by a self-induced electric field. In addition, it was found that when the source and drain electrodes were short circuited, the capacitance of the device was larger than the geometric capacitance and proportional to the channel length, which also supported the interface charging model. The relationship between the two approaches was also discussed. #

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Section: Relationship Between the Two Approachesmentioning

confidence: 81%

Channel Formation as an Interface Charging Process in a Pentacene Field Effect Transistor Investigated by Time-Resolved Second Harmonic Generation and Impedance Spectroscopy

Zhang

Taguchi

Masada

et al. 2012

Jpn. J. Appl. Phys.

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“…The injection time can be simply estimated from the equivalent circuit model as s inj ¼ R c C g . 27 For the transit time across the channel region, we can apply a timeof-flight approach t tr ¼ 1 2 L 2 =ððV gs À V th ÞlÞ. 28 The evaluated ratio of the injection and transit times is plotted in Fig.…”

Section: Resultsmentioning

confidence: 99%

Conservation of the injection and transit time ratio in organic field-effect transistors: A thermally accelerated aging study

Lee

Weis

Manaka

et al. 2012

Journal of Applied Physics

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A thermally accelerated aging for degradation study was used to evaluate the degradation of organic transistor with shallow and deeps traps. A negative threshold voltage shift related to the increase of trapped charge density during the aging was only observed for device with initial shallow traps, while no shift was recorded for devices with deep traps. However, a decrease in the mobility was detected, and an almost constant contact resistance was estimated for both types of devices. Analysis of the potential distribution revealed the conservation of the potential drop on the injection electrode and across the channel region during the entire degradation process. As a result, the ratio of the injection and transit times was conserved and was independent from the shallow traps that were induced by accelerated aging.

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“…Then the contacts do not absorb or inject any charges and do not play a role in the AC measurement. With this condition fulfilled, this method differs fundamentally from conventional impedance measurements in which the source and drain do need to absorb and inject charge [31][32][33][34][35]. …”

Section: Ac Characterization Methodsmentioning

confidence: 99%

Contactless charge carrier mobility measurement in organic field-effect transistors

Roelofs¹,

Li²,

Janssen³

et al. 2014

Organic Electronics

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a b s t r a c tWith the increasing performance of organic semiconductors, contact resistances become an almost fundamental problem, obstructing the accurate measurement of charge carrier mobilities. Here, a generally applicable method is presented to determine the true charge carrier mobility in an organic field-effect transistor (OFET). The method uses two additional finger-shaped gates that capacitively generate and probe an alternating current in the OFET channel. The time lag between drive and probe can directly be related to the mobility, as is shown experimentally and numerically. As the scheme does not require the injection or uptake of charges it is fundamentally insensitive to contact resistances. Particularly for ambipolar materials the true mobilities are found to be substantially larger than determined by conventional (direct current) schemes.

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Carrier injection and transport in organic field-effect transistor investigated by impedance spectroscopy

Cited by 21 publications

References 10 publications

Channel Formation as an Interface Charging Process in a Pentacene Field Effect Transistor Investigated by Time-Resolved Second Harmonic Generation and Impedance Spectroscopy

Channel Formation as an Interface Charging Process in a Pentacene Field Effect Transistor Investigated by Time-Resolved Second Harmonic Generation and Impedance Spectroscopy

Conservation of the injection and transit time ratio in organic field-effect transistors: A thermally accelerated aging study

Contactless charge carrier mobility measurement in organic field-effect transistors

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