2017
DOI: 10.7567/jjap.56.075101
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Carrier injection in nonbonding π states of N-doped graphene by an external electric field

Abstract: Using the density functional theory combined with an effective screening medium method, we studied the electronic structure of N-doped graphene under an external electric field. The electronic states near the Fermi level depend on the carrier concentration reflecting their wave function distribution. The electronic states associated with the dangling bond shift upward with increasing electron concentration, following the upward shift of the Fermi level. The electronic states associated with nonbonding π states… Show more

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Cited by 3 publications
(3 citation statements)
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“…7 Nevertheless, the electronic structure of graphene is fragile against the formation of hybrid structures with foreign materials, such as insulating substrates, [8][9][10][11] metal electrodes, 12 molecular/atomic adsorbates, [13][14][15][16][17][18][19][20][21] and structural defects. [22][23][24][25][26] Furthermore, an external electric field can tune the electronic structure of graphene and its hybrids. 27 That is, foreign materials can be detected by monitoring the electronic structure of graphene.…”
Section: Introductionmentioning
confidence: 99%
“…7 Nevertheless, the electronic structure of graphene is fragile against the formation of hybrid structures with foreign materials, such as insulating substrates, [8][9][10][11] metal electrodes, 12 molecular/atomic adsorbates, [13][14][15][16][17][18][19][20][21] and structural defects. [22][23][24][25][26] Furthermore, an external electric field can tune the electronic structure of graphene and its hybrids. 27 That is, foreign materials can be detected by monitoring the electronic structure of graphene.…”
Section: Introductionmentioning
confidence: 99%
“…In our previous work, such hybrids under an electric field endow versatile electronic properties that are absent in an isolated graphene. 24,25) In graphene thin films, one of whose layers possesses defects, the Fermi level is sensitive to the relative arrangement of the defective graphene layer and the carrier species, leading to the Fermi level pinning for hole doping. 24) Charged nanoparticles adsorbed on graphene surfaces also provide unique electronic properties under carrier injection by the gate electrode.…”
Section: Introductionmentioning
confidence: 99%
“…24,25) In graphene thin films, one of whose layers possesses defects, the Fermi level is sensitive to the relative arrangement of the defective graphene layer and the carrier species, leading to the Fermi level pinning for hole doping. 24) Charged nanoparticles adsorbed on graphene surfaces also provide unique electronic properties under carrier injection by the gate electrode. 25) Despite the fact that the electronic structure of such hybrids under an electric field has been elucidated, the detailed energetics and geometric structures of hybrids under the electric field have not been well examined in detail yet.…”
Section: Introductionmentioning
confidence: 99%