2021
DOI: 10.1002/pssa.202100209
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Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Abstract: Herein, the results that determine some conditions for increasing the radiation hardness of 60Co gamma or 1 MeV electron‐irradiated tin‐doped n‐type Czochralski silicon (Cz n‐Si:Sn) are presented. These conditions are determined from the analysis of the formation kinetics of dominant radiation defects (namely, VO and SnV complexes) and the recombination of charge carriers through the electronic levels of these defects in samples with different concentrations of phosphorus and tin. It is shown that low‐resistiv… Show more

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