Carrier lifetime measurement in semiconductor lasers using injection current pulses of Gaussian shape

Küsters, A. Mesquida; Glade, M.; Heime, K.

doi:10.1109/3.166456

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…where a is corresponding to the highest peak of the encoded signal, b is the center position of the encoded signal which equals to N/2, and w is the Gaussian root-mean-square (RMS) width [33], [34]. As the ratio of b/w converges to zero, all N chips have equal amplitudes of a.…”

Section: A Principle Of Time-spreading As-ocdm En/decodermentioning

confidence: 99%

Ultra-Low Crosstalk En/Decoder Using an Amplitude-Shaping Technique for 100 Gbps/λ OCDM-PAM-4 Transmission in O-Band

Maneekut

Kaewplung

2022

IEEE Access

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This paper proposes an optimized 16-chip multi-level phase-shifted optical code division multiplexing (OCDM) en/decoder for 4-level pulse amplitude modulation (PAM-4) format by using an amplitude-shaping (AS) technique. The optimized en/decoder can efficiently suppress the crosstalk and the primary beat noise (PBN). The code detection performance for 4-OCDM PAM-4 becomes the lowest to our knowledge. The numerical bit error rate analysis and the back-to-back simulation are shown. We also successfully demonstrate by computer simulation a 100 Gbps/λ enabling by 12.5 GBaud 4-OCDM PAM-4 transmission in O-band over 6×30 km with in-line optical amplifiers.INDEX TERMS Amplitude shaping, optical amplifier, o-band transmission, optical code division multiplexing, pulse amplitude modulation

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Section: A Principle Of Time-spreading As-ocdm En/decodermentioning

confidence: 99%

Ultra-Low Crosstalk En/Decoder Using an Amplitude-Shaping Technique for 100 Gbps/λ OCDM-PAM-4 Transmission in O-Band

Maneekut

Kaewplung

2022

IEEE Access

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“…Among the pulsation techniques, Q-switching is one of the most successful approaches to obtain kilowatt class laser peak power for science and industry with relative ease, in which a much larger population inversion can be attained by removing cavity feedback to a point, where a sudden change of the cavity Q factor causes the generation of short intense laser pulses. Given that the fluorescent lifetimes of solid-state laser mediums are on the order of microsecond to millisecond 15 , which are several magnitudes of orders larger than that of semiconductor gain mediums 16 , 17 , they are suitable for producing short-pulse high-peak-power laser with excellent beam quality. However, unlike semiconductor lasers, which can be electrically driven, the solid-state laser mediums comprise dielectrics or glasses and require an external laser for pumping, thereby making compact chip-scale high-peak-power lasers very challenging.…”

Section: Introductionmentioning

confidence: 99%

Chip-scale high-peak-power semiconductor/solid-state vertically integrated laser

Yue¹,

Tanaka²,

Hirano³

et al. 2022

Nat Commun

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Compact lasers capable of producing kilowatt class peak power are highly desirable for applications in various fields, including laser remote sensing, laser micromachining, and biomedical photonics. In this paper, we propose a high-peak-power chip-scale semiconductor/solid-state vertically integrated laser in which two cavities are optically coupled at the solid-state laser gain medium. The first cavity is for the intra-pumping of ytterbium-doped yttrium aluminum garnet (Yb:YAG) with an electrically driven indium gallium arsenide (InGaAs) quantum well, and the second cavity consists of Yb:YAG and chromium-doped yttrium aluminum garnet (Cr:YAG) for passive Q-switching. The proposed laser produces pulses as short as 450 ps, and an estimated peak power of 57.0 kW with a laser chip dimension of 1 mm3. To the best of our knowledge, this is the first monolithic integration of semiconductor and solid-state laser gain mediums to realize a compact high-peak-power laser.

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“…=1~10 ps) of the upper laser level in a QCL is two to three orders of magnitude smaller than that of interband semiconductor laser ( 4  = 1~10 ns)[125]. While their photon lifetimes are in the same order of magnitude.…”

mentioning

confidence: 87%

Theoretical investigation on intrinsic linewidth of quantum cascade lasers

Liu¹

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Quantum cascade lasers (QCLs) are unipolar laser sources relying on intersubband transitions in coupled multiple quantum well systems. The light emission can be tuned across the mid-infrared (mid-IR, from 3 to 20 m) and Terahertz (THz, from 1.2 to 5 THz, or 60 to 250 m) ranges of the electromagnetic spectrum. Since their invention in 1994 for mid-IR QCLs and in 2002 for THz QCLs, respectively, these lasers have undergone tremendous improvement, and have become probably the most prominent coherent light sources in the mid-IR and THz spectral ranges. However, many important applications of mid-IR and THz coherent light sources, e.g. spectroscopy and high-speed free-space data communication, are greatly influenced by intrinsic

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Carrier lifetime measurement in semiconductor lasers using injection current pulses of Gaussian shape

Cited by 5 publications

References 11 publications

Ultra-Low Crosstalk En/Decoder Using an Amplitude-Shaping Technique for 100 Gbps/λ OCDM-PAM-4 Transmission in O-Band

Ultra-Low Crosstalk En/Decoder Using an Amplitude-Shaping Technique for 100 Gbps/λ OCDM-PAM-4 Transmission in O-Band

Chip-scale high-peak-power semiconductor/solid-state vertically integrated laser

Theoretical investigation on intrinsic linewidth of quantum cascade lasers

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