Carrier Localization in Gallium Nitride

Wetzel, Christian; Walukiewicz, W.; Häller, E. E.; Ager, Joel W.; Chen, A.; Fischer, Sebastian; Yu, Pyng; Jeanloz, Raymond; Grzegory, I.; Porowski, S.; Suski, T.; Amano, Hiroshi; Akasaki, Isamu

doi:10.4028/www.scientific.net/msf.196-201.31

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“…At 6% contraction the Fermi level is located between 0.05 and 0.10 eV below the CB edge; and at 9% contraction this interval is between 0.20 and 0.25 eV. These predicted positions of the Fermi level relative to the CB edge are in a reasonable agreement with earlier experiments of Wetzel et al [22] on the wGaN sample under pressure up to 27 GPa, and the experimental data of Perlin et al [18], which have shown an essential decrease of the c-GaN conductivity at a pressure of 20 GPa. At the same time, they do not support the latest conclusion of the same authors [26] that oxygen unintentional impurities are the only origin of the high free electron concentration in GaN crystals.…”

Section: Pressure Dependence Of Nitrogen Vacancy Levelssupporting

confidence: 82%

“…This crossover shifts the vacancy level to the gap region resulting in a localization of the states accompanied by a reduction in the free carrier concentration. These characteristics have, in fact, been observed and the crossover pressure was found to be about 18 GPa [22]. Furthermore, the vacancy level was estimated to be 0.4 eV above the CB edge at ambient pressure and 0.13 eV below the edge at 27 GPa.…”

Section: Pressure Dependence Of Nitrogen Vacancy Levelsmentioning

confidence: 73%

See 1 more Smart Citation

Electronic Structure of a Nitrogen Vacancy in Cubic Gallium Nitride

Gubanov

Wright

Nelson

et al. 1998

phys. stat. sol. (b)

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The electronic structure of a nitrogen vacancy in zinc-blende GaN has been calculated using two different supercells with the plane-wave pseudopotential (PWPP) and the tight-binding linear muffin-tin orbitals (TB-LMTO) methods. The Ga 3d states are included in the valence states. Relaxation near a nitrogen vacancy site was examined with the PWPP method using a 31-atom unit cell. The nearest neighbor Ga atoms were found to move toward the vacancy site by 0.04 # e resulting in a relaxation energy of only 0.04 eV. Given the absence of large relaxations, TB-LMTO calculations were then performed for 31-and 63-atom unit cells using an ideal (unrelaxed) geometry. Densities of states and charge density maps show that a nitrogen vacancy can induce a partially filled band, which overlaps with the conduction states, resulting in n-type conductivity. The energy shift of this band under pressure was investigated for volume compressions up to 12% and compared with results from recent high-pressure measurements for GaN.

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Section: Pressure Dependence Of Nitrogen Vacancy Levelssupporting

confidence: 82%

Section: Pressure Dependence Of Nitrogen Vacancy Levelsmentioning

confidence: 73%