Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

Abstract

We explore the impact of carrier concentration, temperature, and bismuth (Bi) composition on the carrier mobility of indium antimonide-bismide (InSb1-x Bi x ) material. Utilizing the molecular beam epitaxy (MBE) method, we achieved high Bi composition uniformity. This method also enables the InSb1-x Bi x to be grown on semi-insulating (SI) GaAs substrate, effectively preventing parallel electrical conduction during Hall effect measurement. Our findings reveal that InSb1-x Bi x doped with silicon (Si) and tellurium (Te) consistently exhibit n-type conductivity. In contrast, InSb1-x Bi x doped with beryllium (Be) exhibit a transition from n to p type conductivity, subjected to the Be doping level and the measurement temperature. Based on these observations, we proposed an empirical model describing the dependence of InSb1-x Bi x electron mobility on carrier concentration, temperature, and Bi composition, specifically for Si and Te-doped InSb1-x Bi x samples. These insights gained from this study hold potential application in photodetector device simulations.