Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

Arteev, D. S.; Сахаров, А. В.; Lundin, W. V.; Zakheim, D. A.; Заварин, Е. Е.; Tsatsulnikov, A. F.

doi:10.1088/1742-6596/1400/7/077009

Cited by 4 publications

(5 citation statements)

References 20 publications

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“…Afterward, the temperature was lowered back to 1050 °C, and the structure was completed with a 1 nm AlN interlayer and 26 nm Al 0.27 Ga 0.83 N barrier layer. A thin AlN interlayer almost completely eliminates the penetration of the electron wavefunction into the ternary AlGaN barrier, enabling increased electron mobility by significantly reducing alloy-disorder scattering [ 22 , 37 ]. The epitaxial structure is schematically shown in Figure 1 .…”

Section: Methodsmentioning

confidence: 99%

“…The paper [ 20 ] reported a gradual improvement in HEMT properties with the miscut angle increased to 1.0 degree, but no analysis was presented. On the other hand, interface roughness scattering (IFR) is known to be one of the scattering mechanisms severely limiting the mobility of 2DEG of AlGaN- and InAlN-based HEMTs, especially at low temperatures [ 21 , 22 ]. Additionally, since wafer miscut angle may affect the morphology of the layers grown, selecting an appropriate substrate could be beneficial in terms of obtaining better-performing devices.…”

Section: Introductionmentioning

confidence: 99%

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AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

et al. 2023

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A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that wafer misorientation had an influence on the strain evolution during the growth and surface morphology, and could have a strong impact on the mobility of 2D electron gas, with a weak optimum at 0.5° miscut angle. A numerical analysis revealed that the interface roughness was a main parameter responsible for the variation in electron mobility.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

et al. 2023

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“…There is no evidence for the presence of Fe or Fe-nitride nanoscale clusters in GaN:Fe with Fe concentrations of 1% and lower [17]; therefore, we treated IMP scattering as scattering by single uncorrelated impurities. Alloy disorder scattering was neglected, since a 1 nm AlN interlayer almost completely eliminates the penetration of the wavefunction into the ternary AlGaN barrier [18]. In contrast to, e.g., boron-containing III-Vs [19,20] or indium-containing nitrides [21], AlGaN does not tend to phase separation/clustering; therefore, alloy cluster scattering [22] was not taken into account as well.…”

Section: Modelmentioning

confidence: 99%

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

et al. 2022

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The results of the study of the influence of Fe segregation into the unintentionally doped GaN channel layer in AlGaN/AlN/GaN heterostructures with Fe-doped GaN buffer layer on the electrical properties of two-dimensional electron gas are presented. A set of several samples was grown by metal-organic vapor-phase epitaxy and characterized by the van der Pauw method. The dependence of concentration and mobility of the two-dimensional electron gas on the channel layer thickness was analyzed theoretically by self-consistent solving of 1D Poisson and Schrödinger equations and scattering rate calculations within the momentum relaxation time approximation. It was found that both concentration and mobility decreases were responsible for the increase in the sheet resistance in the structures with a thinner channel layer, with a drop in mobility being not only due to ionized impurity scattering, but also due to a combined effect of weakening of screening, lower carrier energy and change in form-factors on scattering by interface roughness, dislocations and polar optical phonons.

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“…[12][13][14][15] Others used approximate analytic expressions for mobility to describe the POP scattering. [16][17][18] The predictions of these simplified models often differ greatly. To calculate precise POP scattering momentum relaxation time, it is necessary to consider multi-subband occupation and directly solve the Boltzmann equation.In this article, we study the impact of multi-subband POP scattering on the electron transport in InAlN/AlN/GaN heterostructures in a temperature range of 100-600 K. By solving the Schrödinger-Poisson equations, structural physical parameters such as subband energies, wave functions, and Fermi level of the InAlN/AlN/GaN heterostructure are obtained and applied to multi-subband POP scattering calculations.…”

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confidence: 99%

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confidence: 99%

Multi‐Subband Polar Optical Phonon Scattering in InAlN/AlN/GaN Heterostructures

Zhang

et al. 2023

Physica Rapid Research Ltrs

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The high density of two‐dimensional electron gas (2DEG) in InAlN/AlN/GaN heterostructures results in significant occupation of higher subbands, it is thus imperative to consider multi‐subband occupation and inter‐subband scattering in the calculations of polar optical phonon (POP) scattering. The physical parameters, such as subband energies, wave functions of the four lowest subbands, and Fermi level of InAlN/AlN/GaN heterostructures, are calculated by solving the Schrödinger‐Poisson equations and applied to the multi‐subband POP scattering model. The dependence of mobility, which is limited by multi‐subband POP scattering, on temperature and 2DEG density is studied. The results show that multi‐subband occupation and inter‐subband scattering play important roles in electron transport. The higher subbands contribute 26% to room‐temperature electron mobility. Two simplified POP scattering models, which either ignore multi‐subband occupation or simplify the in‐scattering processes are evaluated. The results show that both simplified models introduce significant deviations in the mobilities that are limited by POP scattering. The relative magnitudes of mobility in each subband depend on the energy dependence of momentum relaxation time and the energy distribution of each subband.This article is protected by copyright. All rights reserved.

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Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

Cited by 4 publications

References 20 publications

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

Multi‐Subband Polar Optical Phonon Scattering in InAlN/AlN/GaN Heterostructures

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