Carrier Modulation of Ambipolar Few‐Layer MoTe<sub>2</sub> Transistors by MgO Surface Charge Transfer Doping

Luo, Wenhua; Zhu, Mengjian; Peng, Gang; Zheng, Xiaoming; Miao, Feng; Bai, Shuxin; Zhang, Xueao; Qin, Shiqiao

doi:10.1002/adfm.201704539

Cited by 94 publications

(110 citation statements)

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“…We observed a monotonous increase of the mobility as the temperature was decreased with saturation at low temperatures (<160 K). The µ 0 for the w/In FET (32 nm thick In) was ≈3700 cm 2 V −1 s −1 at room temperature, while its saturation value was ≈9100 cm 2 V −1 s −1 at 80 K. It could be deduced that such a remarkably high mobility of InSe obtained from our simple configuration exceeded the majority of other 2D semiconducting channels with the similar case of surface charge doping . A detailed description about the YFM has been provided in the Supporting Information.…”

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confidence: 78%

High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping

et al. 2018

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graphene in 2004, diverse layered transition metal dichalcogenides with tunable band gaps have been shown to exhibit extraordinary electrical and optical properties in logic circuits, photodetectors, light-emitting diodes, gas sensors, and energy storage devices. [7][8][9][10][11][12][13][14] However, owing to their low mobility ceiling of a few hundred cm 2 V −1 s −1 , 2D-based fieldeffect transistors (FETs) still encounter a bottleneck for their application in highfrequency electronic devices. In this regard, indium selenide (InSe), with ultrahigh mobility near 1000 cm 2 V −1 s −1 at room temperature, has successfully attracted attention as one of the burgeoning III-VI group layered metal chalcogenides. The van der Waals layered Se-In-In-Se stacked structure, with a smooth surface and narrow band gap (1.26 eV), exhibits a perfect photoresponse to the visible spectrum. [15][16][17][18] Recent studies, which have focused on gating engineering with graphene, a passivation layer with hexagonal boron nitride or a self-assembled monolayer, and contact engineering with low work-function electrodes, have demonstrated that layered InSe possesses an intrinsically excellent charge transport and optoelectronic performance that are comparable with majority of 2D materials. [19][20][21][22][23][24][25] For instance, Wang Tunability and stability in the electrical properties of 2D semiconductors pave the way for their practical applications in logic devices. A robust layered indium selenide (InSe) field-effect transistor (FET) with superior controlled stability is demonstrated by depositing an indium (In) doping layer. The optimized InSe FETs deliver an unprecedented high electron mobility up to 3700 cm 2 V −1 s −1 at room temperature, which can be retained with 60% after 1 month. Further insight into the evolution of the position of the Fermi level and the microscopic device structure with different In thicknesses demonstrates an enhanced electron-doping behavior at the In/InSe interface. Furthermore, the contact resistance is also improved through the In insertion between InSe and Au electrodes, which coincides with the analysis of the low-frequency noise. The carrier fluctuation is attributed to the dominance of the phonon scattering events, which agrees with the observation of the temperature-dependent mobility. Finally, the flexible functionalities of the logic-circuit applications, for instance, inverter and not-and (NAND)/not-or (NOR) gates, are determined with these surface-doping InSe FETs, which establish a paradigm for 2D-based materials to overcome the bottleneck in the development of electronic devices. InSe TransistorsBecause of the down scaling limit of silicon-based devices, 2D materials with prominent mechanical flexibility and carrier transport performance have provided significant potential for their use in the new generation atomic electronic devices. [1][2][3][4][5][6] Following in the footsteps of the discovery of monolayer

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confidence: 78%

High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping

et al. 2018

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“…[7] Copyright 2013, Springer Nature. [106] in the same group to form stable alloys than those in different groups. By contrast, impurity atoms of common 2D doped TMDs are usually unmatched with the original lattice structure of the TMD, and their locations in the TMD lattice are more complex than alloys, where the other atoms usually directly replace the original atoms.…”

Section: D Doped Transition-metal Dichalcogenidementioning

confidence: 96%

“…2D TMDs alloys can also be utilized to modulate the carrier type, such as WS 2 x Se 2−2 x , which demonstrates a different behavior of carrier transport when the proportions of WS 2 (n‐type) and WSe 2 (p‐type) are different . MoTe 2 , showing ambipolar characteristics, however, can be tuned into different carrier types by utilizing MgO surface charge‐transfer doping . In addition, doping is an effective technology to optimize the contact between metals and TMDs …”

Section: D Doped Transition‐metal Dichalcogenidementioning

confidence: 99%

“…[105] MoTe 2 , showing ambipolar characteristics, however, can be tuned into different carrier types by utilizing MgO surface charge-transfer doping. [106] In addition, doping is an effective technology to optimize the contact between metals and TMDs. [107] TMDs show excellent optoelectronic properties; for example, monolayer MoS 2 possesses a high photoresponsivity of 880 A W −1 .…”

Section: Applications Of 2d Doped Tmdsmentioning

confidence: 99%

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Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

et al. 2018

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2D transition‐metal dichalcogenides (TMDs), which exhibit fascinating and fantastic properties, have promising applications in future electronic devices and photoelectric devices. Here, the recent research on 2D TMDs is summarized, including single components, 2D doped TMDs, and 2D van der Waals heterostructures. The physical picture, synthetic methods, and optoelectronic properties of these 2D materials are comprehensively described. Opportunities and emerging applications of 2D materials in the future are briefly discussed.

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“…For electrical properties, the first study of SCTD on BP successfully realizes the giant electron and hole doping effect via Cs 2 CO 3 and MoO 3 modification, respectively . Moreover, few layer MoTe 2 based p–n junction and complementary multifunctional inverter have been achieved via spatially controlling the MgO doping region . Currently, the SCTD technique is mainly employed in single 2D material devices, which sheds light for its application in the vdWHs, particularly for TFETs with the unique band alignment (type III) at the interface .…”

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confidence: 99%

Van der Waals Heterostructures with Tunable Tunneling Behavior Enabled by MoO₃ Surface Functionalization

Wang

Zheng

Liu

et al. 2020

Advanced Optical Materials

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Heterostructures of 2D materials represent a powerful material platform that has essentially defined the technological foundation for all modern electronic and optoelectronic devices. Although most of the reported heterostructures devices exhibit extraordinary electronic and optoelectronic properties, they depend on the proper combination of selected materials, which limits the broad tunability of the devices. Herein, it is demonstrated that a vertical van der Waals heterostructures (vdWHs) device, which is composed of MoS2 and MoTe2, can function as a backward tunneling diode, photovoltaic cell, and photodetector through surface functionalization of MoO3. The realization of this backward tunneling diode is attributed to the band alignment variation from type II to type III via in situ MoO3 functionalization. Furthermore, the power conversion efficiency of this vdWHs based photovoltaic device is significantly enhanced by nearly four times, benefiting from the more efficient photocarrier separation after MoO3 decoration. The enhanced photovoltaic effect can be retained even after air exposure, revealing the excellent air stability. Meanwhile, the modified vdWHs device exhibits the photodetecting property with photocurrent responsivity of around 2 A W−1 and external quantum efficiency about 400%. This work promises surface functionalization as an effective approach to broaden the device functionality of 2D heterostructures in electronics and optoelectronics.

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Carrier Modulation of Ambipolar Few‐Layer MoTe₂ Transistors by MgO Surface Charge Transfer Doping

Cited by 94 publications

References 50 publications

High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping

High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

Van der Waals Heterostructures with Tunable Tunneling Behavior Enabled by MoO₃ Surface Functionalization

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Carrier Modulation of Ambipolar Few‐Layer MoTe2 Transistors by MgO Surface Charge Transfer Doping

Cited by 94 publications

References 50 publications

High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping

High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

Van der Waals Heterostructures with Tunable Tunneling Behavior Enabled by MoO3 Surface Functionalization

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Carrier Modulation of Ambipolar Few‐Layer MoTe₂ Transistors by MgO Surface Charge Transfer Doping

Van der Waals Heterostructures with Tunable Tunneling Behavior Enabled by MoO₃ Surface Functionalization