Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy

Liu, F. Y.; Griffin, P.B.; Plummer, J. D.; Lyding, Joseph W.; Moran, J. M.; Richards, John F.; Kulig, L.

doi:10.1116/1.1643054

Cited by 9 publications

(13 citation statements)

References 9 publications

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“…20) A number of investigations have conˆrmed that tunneling spectra of such stabilized Si surfaces show variation with dopant type and concentration due to passivation of dangling bond states and the suppression of surface states. [27][28][29][30][31][32] To detect individual dopant atoms, atomically ‰at (111) and (001) surfaces of Si were prepared. The Si(111) surface can be atomically ‰attened by wet treatment in NH 4 F aqueous solutions.…”

Section: Hydrogenationmentioning

confidence: 99%

Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy

2011

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Recent progress in two-dimensional doping proˆle measurements on silicon with scanning tunneling microscopy and spectroscopy (STM/STS) is presented. STM spectroscopy modes described are constant-current imaging, onset voltage proˆling, vacuum-gap modulation spectroscopy and resonant-electron-tunneling spectroscopy with a marker molecule. These modes employ dependence of tunneling current on dopant type and concentration through the band bending induced by the metal STM tip at the surface. The combination of multiple spectroscopy modes and complimentary simulations makes the STM/STS as a powerful instrument for Si device characterization with the ability to observe the surface potential and location of individual dopant atoms on ‰at and electrically inert Si surfaces. Actual measurements are demonstrated for both the oxidized surfaces and the hydrogen-terminated Si(111) surface. Carrier concentration maps of small Si devices are shown. The mechanism of the measurements is discussed.

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Section: Hydrogenationmentioning

confidence: 99%

Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy

2011

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“…[1][2][3][4][5][6][7][8] In these studies, however, the imaging of individual dopant atoms has not been performed. In order to detect individual dopant atoms, it is indispensable to prepare an atomically flat and electronically unpinned surface, on which measurements are performed.…”

Section: Introductionmentioning

confidence: 99%

Scanning tunneling microscopy detection of individual dopant atoms on wet-prepared Si(111):H surfaces

Nishizawa

Bolotov

Tada

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Adsorption of atomic hydrogen on the Si(001) 4×3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy J. Vac. Sci. Technol. B 17, 983 (1999); 10.1116/1.590680 Two-dimensional pn -junction delineation and individual dopant identification using scanning tunneling microscopy/spectroscopy J. Vac. Sci. Technol. B 16, 453 (1998); 10.1116/1.589829 Scanning tunneling microscopy and low energy electron diffraction study of the formation of a ∛×∛R30°r econstruction on the hydrogen etched Si(111) 1×1 surface J.

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“…Atomically flat (111) terraces were obtained by etching in NH 4 F solutions prior to oxidation. Downloaded to IP: We used vacuum-gap modulation (VGM) STM spectroscopy technique, also called barrier-height spectroscopy, [5] to obtain STM topographs and LWF maps in ultra-high vacuum (~4×10 -9 Pa) at room temperature. (Fig.1) Each layer had a thickness of 100 nm and a boron concentration in a range of 1×10 17 -1×10 20 /cm 3 .…”

Section: Methodsmentioning

confidence: 99%

Surface Potential Mapping and Charge Center Detection on Oxidized Silicon Surfaces by Vacuum-Gap Modulation Scanning Tunneling Spectroscopy

Bolotov¹,

Nishizawa²,

Kanayama³

2007

AIP Conference Proceedings

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Spatial variation of local work function (LWF), which represents the surface potential, was examined for p-n junctions on a Si(111) substrate and for (110) cross sectional surfaces of boron-doped p-p + multi-layers (1E17 -5E19 /cm 3 ) grown on a (001) substrate. The LWF maps obtained by the vacuum-gap modulation scanning tunneling spectroscopy (VGM-STS) on oxygen-passivated atomically flat (111) terraces reveal the variation in carrier density across a p-n junction. Density of local fluctuations in LWF maps (i) decreases with increase of the bias voltage, and (ii) correlates well with the boron doping concentration, verifying their origin in local electrostatic fields around negative point charge centers and in particular, boron acceptors beneath the surface. The results demonstrate the ability of VGM-STS to measure both the surface potential and distribution of charge centers with a sub-nanometer resolution on oxidized Si surfaces.

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Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy

Cited by 9 publications

References 9 publications

Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy

Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy

Scanning tunneling microscopy detection of individual dopant atoms on wet-prepared Si(111):H surfaces

Surface Potential Mapping and Charge Center Detection on Oxidized Silicon Surfaces by Vacuum-Gap Modulation Scanning Tunneling Spectroscopy

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